A facile method to oxidize p-type Zinc Selenide nanowires into n-type Zinc Oxide nanowires

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• 作者：Xiwei Zhang ; Zhenjie Tang ; Dan Hu ; Zhi Wang…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：27
• 期：3
• 页码：3021-3025
• 全文大小：1,455 KB
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• 作者单位：Xiwei Zhang (1)
  Zhenjie Tang (1)
  Dan Hu (1)
  Zhi Wang (1)
  Fengjun Yu (1)
  Haitao Cui (1)
  Tongshuai Xu (1)
  Lin Ju (1)
  
  1. College of Physics and Electrical Engineering, Anyang Normal University, Anyang, 455000, Henan, People’s Republic of China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

A facile method was used to oxidize p-type Zinc Selenide (ZnSe) nanowires into n-type Zinc Oxide (ZnO) through a 700 °C annealing process in air. Single crystal ZnSe nanowires, with a hole concentration of 0.805 × 1018 cm−3 and a negative photoconductivity, were oxidized into polycrystalline ZnO nanowires with an electron concentration of 4.88 × 1018 cm−3 and a positive photoconductivity. Additionally, both the as-synthesized ZnSe nanowires and the post-oxidized ZnO nanowires presented excellent optoelectronic properties. This method can be used to construct radial p–n junctions or other nano-devices based on a single NW through a regioselective oxidation process.