The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

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• 作者：Zhongshan Zheng 郑中山 ; Jin Ning 宁瑾 ; Baiqiang Zhang 张百强…
• 关键词：silicon ; on ; insulator ; total dose radiation hardness ; nitrogen implantation ; fluorine implantation
• 刊名：Science China Materials
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：59
• 期：8
• 页码：657-664
• 全文大小：2,282 KB
• 刊物类别：Materials Science, general; Chemistry/Food Science, general;
• 刊物主题：Materials Science, general; Chemistry/Food Science, general;
• 出版者：Science China Press
• ISSN：2199-4501
• 卷排序：59

文摘

Nitrogen (N) and fluorine (F) ions were sequentially implanted into the buried oxide (BOX) to improve the total dose radiation hardness of the BOX layer in silicon-oninsulator (SOI) materials. The radiation response of the BOX layers modified by the ion implantation was characterized by flat-band voltage shifts and trapped charge changes in the BOX, based on the capacitance-voltage (C-V) measurements on the polysilicon-BOX-semiconductor (PBS) structures fabricated on the SOI materials, before and after irradiation using Co-60 γ rays with various doses range from 0.7 to 1.7 Mrad(Si). The experimental results show that a considerably enhanced hardness for the BOX layer can be achieved by this co-implantation of nitrogen and fluorine on proper process conditions, and the radiation responses of the BOX layers are directly associated with the anneal times after nitrogen implantation. In particular, the rebound and fluctuation phenomena of the BOX radiation response were observed with increasing dose, according to the changes in the flat-band voltages, which cannot be explained in terms of the increase in radiation induced interface state density, and the related mechanisms were analyzed and discussed.