Dynamics of an Optically Generated Electric Field in a Quantum Dot Molecule Device Using Time-Resolved Photoluminescence Measurements

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• 作者：Venkata R. Thota ; Thushan E. Wickramasinghe…
• 关键词：Optical field modulation ; photovoltaic band ; flattening ; quantum dot molecules ; local electric field effects ; temporal dynamics ; nanoscale field sensor
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：45
• 期：4
• 页码：2038-2044
• 全文大小：3,644 KB
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• 作者单位：Venkata R. Thota (1) (2)
  Thushan E. Wickramasinghe (1)
  Kushal Wijesundara (1)
  Eric A. Stinaff (1)
  Allan S. Bracker (3)
  D. Gammon (3)
  
  1. Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, OH, 45701, USA
  2. Intel Corporation, Hillsboro, OR, USA
  3. Naval Research Labs, Washington, DC, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Interdot transitions in the emission spectra of a quantum dot molecule may be used as a sensitive nanoscale probe to measure electric fields. Here, we demonstrate this potential by monitoring the temporal behavior of photovoltaic band flattening in a Schottky diode structure using a two-color excitation scheme. First, a continuous wave laser is tuned to an excitation energy below the wetting layer (WL) emission energy to create the interdot transition that is used to monitor the electric field in the device. A second modulated laser, at higher energy, is then used to create the optically generated electric field (OGEF) which leads to the photovoltaic band flattening. It is found that the rise time of this OGEF is ∼2.85 μs and the decay, or fall time, is on the order of ∼110 μs, most likely determined by device-dependent carrier transport, trapping, and tunneling rates. We also find that, at higher applied fields, the OGEF tends to decay faster and the measured values are consistent with the photovoltaic band-flattening effects reported previously in nanostructure devices.