Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films

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• 作者：Mengqian Yang ; Zhengwu Shen ; Xiaoqing Liu ; Wei Wang
• 关键词：Cu ; Se binary compound ; electrodeposition ; film ; composition ; thermoelectric properties
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：45
• 期：3
• 页码：1974-1981
• 全文大小：2,818 KB
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• 作者单位：Mengqian Yang (1)
  Zhengwu Shen (1)
  Xiaoqing Liu (1)
  Wei Wang (1)
  
  1. Department of Applied Chemistry, School of Chemical Engineering and Technology, Tianjin University, 300072, Tianjin, People’s Republic of China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Cu-Se binary compound films have been prepared by electrodeposition from solutions containing CuSO₄, H₂SeO₃, and H₂SO₄ and their composition, structure, and thermoelectric performance analyzed. Moving the depositing potential negatively increased the Cu content in the film, remarkably so for relatively low Cu2+ concentration in the solution. X-ray diffraction analysis showed that the phase composition of the films varied with their Cu content. Cu-Se binary compound films electrodeposited from solutions with different concentration ratios of CuSO₄ to H₂SeO₃ showed two different phases: α-Cu_2−x Se (monoclinic) with Se content in the range of 33.3 at.% to 33.8 at.%, and β-Cu₂Se (cubic) with Se content in the range of 35.3 at.% to 36.0 at.%. The highest power factor for electrodeposited Cu_2−x Se film was 0.13 mW/(K2 m) with Seebeck coefficient of 56.0 μV/K.