Electrical performance of static induction transistor with transverse structure

详细信息    查看全文

• 作者：Chunjuan Liu ; Yongshun Wang ; Zaixing Wang ; Chao Chen
• 关键词：static induction transistor ; surface gate ; transverse structure ; parasitical capacitance ; gate ; source breakdown voltage
• 刊名：SCIENCE CHINA Information Sciences
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：60
• 期：2
• 全文大小：426 KB
• 刊物类别：Computer Science
• 刊物主题：Chinese Library of Science
  Information Systems and Communication Service
  
• 出版者：Science China Press, co-published with Springer
• ISSN：1869-1919
• 卷排序：60

文摘

A novel static induction transistor with transverse surface gate structure was designed and successfully fabricated in this paper. Its basic electrical characteristics and frequency performance was investigated in depth. The optimum technological parameters such as source-gate space and epitaxial layer thickness for obtaining excellent frequency performance and high blocking voltage capacity were represented and discussed in detail. The main advantage of this work is that the performances of device were improved with simple structure and technological processes. The experimental and simulated results demonstrate the trans-conductance g_m and gate-source breakdown voltage BV_GS of the transverse type SIT increase from 60 to 87 ms and 20 to 26 V, respectively, in addition to obtaining higher than 100 MHz operating frequency under relatively simple technology processes compared with those of traditional vertical SIT.