Characterization of reactions at titanium/nickel silicide interface using X-ray photoelectron spectroscopy and transmission electron microscopy
- 作者：Zhao ; Jin ; Lu ; Jiong-Ping ; Xu ; Yu-Qing ; Kuan ; Yu-Ji R. ; Tsung ; Lancy
- 关键词：81.05.C ; 68.35 ; 85.40.L ; Nickel silicide ; Interfacial reaction ; Silicon consumption ; Contact resistance ; XPS ; TEM ; Four-point probe
- 刊名：Applied Surface Science
- 出版年：2003
- 期刊代码：6_01694332
- 类别：ms
- 出版时间：April 30, 2003
- 卷：211
- 期：1-4
- 页码：367-372
- 文件大小：228 K
摘要
TiN/Ti/NiSi/Si multilayer system is of great technological importance for complementary metal-oxide-semiconductor (CMOS) device fabrication. Interfacial reactions in this multilayer system play a critical role in determining the contact resistance and affect silicon consumption, a key issue in shallow junction structures. In this report, interfacial reactions in TiN/Ti/NiSi/Si multilayer systems, with a focus on Ti/NiSi interface, were characterized using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and four-point probe measurements. Impact of thermal treatment temperatures was investigated.