Magneto-transport of electrons in a nonhomogeneous magnetic field

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• 作者：Ibrahim ; I. S. ; Schweigert ; V. A. ; Badalian ; S. M. ; Peeters ; F. M.
• 刊名：Superlattices and Microstructures
• 出版年：1997
• 期刊代码：122_07496036
• 类别：ms
• 出版时间：September, 1997
• 卷：22
• 期：2
• 页码：203-207
• 文件大小：115 K

摘要

We investigate the magnetoresistance of a two-dimensional electron gas (2DEG) in the presence of a magnetic tunnel barrier of μm width. The classical 2D electrostatic problem is solved numerically from which we obtain the potential, electric field and current distribution in the 2DEG. We found that most of the electrons are injected at the edges of the magnetic barrier. Our results reproduce the positive background resistance observed by M. L. Leadbeateret al. [Phys. Rev.B52, R8629 (1995)] in the magnetoresistance of a nonplanar GaAs/AlGaAs heterojunction.