Device-quality GaN–dielectric interfaces by 300°C remote plasma processing

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• 作者：Bae ; C. ; Rayner ; G.B. ; Lucovsky ; G.
• 关键词：GaN&ndash ; dielectric interfaces ; Surface leaning ; Subcutaneous oxidation ; Ga<sub>2sub>O<sub>3sub> ; SiO<sub>2sub> ; MOSd devices
• 刊名：Applied Surface Science
• 出版年：2003
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：June 30, 2003
• 卷：216
• 期：1-4
• 页码：119-123
• 文件大小：162 K

摘要

In previous studies, device-quality Si&ndash;SiO<sub>2sub> interfaces and dielectric bulk films (SiO<sub>2sub>) were prepared using a two-step process; (i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (mg align=center border=0 SRC=/images/glyphs/BQ1.GIF>0.6nm) and (ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to GaN&ndash;SiO<sub>2sub> system. Low-temperature (300°C) remote N<sub>2sub>/He plasma cleaning of the GaN surface, and the kinetics of GaN oxidation using RPAO process and subcutaneous oxidation during the SiO<sub>2sub> deposition using an RPECVD process have been investigated from analysis of on-line Auger electron spectroscopy (AES) features associated N and O. Compared to single-step SiO<sub>2sub> deposition, significantly reduced defect state densities are obtained at the GaN&ndash;dielectric interfaces by independent control of GaN&ndash;GaO<sub>xsub> (xmg align=center border=0 SRC=/images/glyphs/BQ1.GIF>1.5) interface formation by RPAO, and SiO<sub>2sub> deposition by RPECVD.