Lattice thermal expansion for normal tetrahedral compound semiconductors

详细信息	查看全文 | 推荐本文 |

• 作者：M.S. Omar
• 关键词：Lattice thermal expansion ; Compound semiconductors ; Semiconductor ionicity
• 刊名：Materials Research Bulletin
• 出版年：2007
• 期刊代码：60_00255408
• 类别：ms
• 出版时间：15 February 2007
• 卷：42
• 期：2
• 页码：319-326
• 文件大小：334 K

摘要

The cubic root of the deviation of the lattice thermal expansion from that of the expected value of diamond for group IV semiconductors, binary compounds of III–V and II–VI, as well as several ternary compounds from groups I–III–VI₂, II–IV–V₂ and I–IV₂V₃ semiconductors versus their bonding length are given straight lines. Their slopes were found to be 0.0256, 0.0210, 0.0170, 0.0259, 0.0196, and 0.02840 for the groups above, respectively. Depending on the valence electrons of the elements forming these groups, a formula was found to correlate all the values of the slopes mentioned above to that of group IV. This new formula which depends on the melting point and the bonding length as well as the number of valence electrons for the elements forming the compounds, will gives best calculated values for lattice thermal expansion for all compounds forming the groups mentioned above. An empirical relation is also found between the mean ionicity of the compounds forming the groups and their slopes mentioned above and that gave the mean ionicity for the compound CuGe₂P₃ in the range of 0.442.