Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

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• 作者：F. Marty ; L. Rousseau ; B. Saadany ; B. Mercier ; O. Franç ; ais ; Y. Mita and T. Bourouina
• 关键词：Micromachining ; DRIE ; HARMS ; Sub-micron ; 3D ; Silicon
• 刊名：Microelectronics Journal
• 出版年：2005
• 期刊代码：72_00262692
• 类别：ms
• 出版时间：2005
• 卷：36
• 期：7
• 页码：673-677
• 文件大小：482 K

摘要

Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes.