Crystal structures of the compounds formed in DyCo2-DyGa2 pseudo-binary system at 773K

详细信息    查看全文 | 下载全文 | 推荐本文 |

• 作者：Liu FuShengAo WeiQinWu LiLi JunQin
• 会议时间：2008-11-01
• 关键词：晶体结构 ; X射线衍射 ; 赝二元系 ; 电弧熔炼
• 作者单位：Liu FuSheng,Ao WeiQin,Li JunQin(College of Materials Science and Engineering,Shenzhen University and Shenzhen Key Laboratory of Special Functional Materials,Shenzhen 518060,P.R China)Wu Li(The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials,Ministry of Education,Nankai University,Tianjin 300457,PR China)
• 母体文献：第十四届全国相图会议暨国际相图与材料设计研讨会论文集
• 会议名称：第十四届全国相图会议暨国际相图与材料设计研讨会
• 会议地点：长沙
• 主办单位：中国物理学会
• 语种：chi

摘要

Serials of DyCo2-xGax alloys with x from O to 2 were prepared by arc melting and investigated by X-ray powder diffraction analysis.Four ternary compounds,DyCo1.33Ga0.67,DyCoGa,DyCo0.67-0.35Ga1.33-1.65 and DyCo0.25-0.15Ga1.75-1.85,were formed in the serial alloys with different Ga content x.The crystal structures for these compounds were determined by Rietveid refinement method using TOPAS V3.0 software.The Rietveld refinement results reveal that DyCo1.33Ga0.67 has MgZn2-type structure(P63/mmc)with a=5.414(1)and c=8.452(1)A.DyCoGa is of Co2Si-type structure(Pnma)with a=7.052(1),b=4.393(1)and C=6.958(1)A;DyCoo.5Ga1.5 has GdPdSi-type structure(Imma)with a=4.341(1),b=7.007(1)and C=7.551(1)A;and DyC00.2Ga1.8 has AIB2-type structure(P6/mmm)with a=4.339(1)and c=3.634(1)A.The relationships between these structures were discussed.