微波退火条件下NiSi/Si肖特基势垒高度的调节

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英文篇名：Adjustment of NiSi/Si Schottky Barrier Height Using Microwave Annealing 作者：周祥标 ; 许鹏 ; 付超超 ; 吴东平 英文作者：Zhou Xiangbiao;Xu Peng;Fu Chaochao;Wu Dongping;State Key Laboratory of ASIC and System,Fudan University; 关键词：杂质分凝 ; 微波退火 ; NiSi ; 肖特基势垒调节 ; 低温 英文关键词：dopant segregation;;microwave annealing;;NiSi;;Schottky barrier height tuning;;low temperature 中文刊名：BDTJ 英文刊名：Semiconductor Technology 机构：复旦大学专用集成电路与系统国家重点实验室; 出版日期：2016-06-03 出版单位：半导体技术 年：2016 期：v.41;No.334 基金：国家自然科学基金资助项目(61474028) 语种：中文; 页：BDTJ201606012 页数：5 CN：06 ISSN：13-1109/TN 分类号：61-65

摘要

为了满足尺寸不断缩小的金属氧化物场效应晶体管(MOSFET)技术的需求,需要在低温条件下实现肖特基势垒高度的调节,利用杂质分凝技术,结合微波退火进行Ni Si/Si接触的肖特基势垒高度的调节,并采用先离子注入、后淀积金属形成金属硅化物(IBS)和先淀积金属形成金属硅化物后进行离子注入并退火(IAS)两种方案进行研究。通过C-V和I-V测试对制备的样品进行了电学表征,并通过计算给出了其肖特基势垒高度,结果表明微波退火可实现空穴和电子肖特基势垒的有效调节,而且IBS方案的调节效果优于IAS方案的调节效果。除此之外,相对于传统热退火技术,微波退火可以在更低的温度下实现相同肖特基势垒的调节。
        In order to satisfy the demands of the size reduction of MOSFET technology,Schottky barrier height( SBH) tuning should to be achieved at low temperature. Through dopant segregation techniques,microwave annealing was explored to tune the SBH between Ni Si and Si using both implant ions before metal deposition followed by silicidation( IBS) and implant ions after metal deposition followed by silicidation( IAS) schemes. Electric characterization was performed to the samples through C-V and I-V measurements and SBH levels were calculated from the measurement data. The results reveal that microwave annealing can achieve effective hole and electron SBHs tuning and the modulation effect of the IBS scheme is better than that of the IAS scheme. Moreover,compared with conventional thermal annealing,SBH can be tuned to the same level at lower temperature using microwave annealing.

引文

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