摘要
采用不同上砂位置的悬浮上砂电镀金刚石线锯对单晶硅进行锯切试验,记录锯切时间,计算锯切效率,对比不同上砂位置锯丝的锯切性能。用扫描电镜对锯丝上砂及磨损情况进行观测,用表面粗糙度仪对硅片表面粗糙度进行测量。试验结果表明:不同上砂位置的锯丝的磨粒密度相差较大,上砂位置靠近上砂槽体中心的锯丝磨粒密度最大;磨粒密度较大的锯丝的锯切效率较高。磨粒密度为585颗/mm的锯丝锯切效率为4.949 mm~2/min,比磨粒密度为446颗/mm的锯丝锯切效率(2.158 mm~2/min)提高了138%;用磨粒密度不同的锯丝加工出的硅片表面质量差别不大;锯丝的磨损及损伤形式主要是磨粒的磨损、磨粒的脱落及锯丝镀层的磨损与损伤。
Suspended electroplated diamond wire saws with different sanding positions are used to machine single crystal silicon. The sawing performances of different wires are compared by recording machine time and calculating the efficiency. SEM is used to observe the sanding and wear conditions, and the surface roughness is measured by related instruments. Results show that the density of abrasive grain varies greatly as sanding position changes, while that is the highest when sanding position is close to the center of the launder. It is also found that the cutting efficiency is higher if the wire saw has higher abrasive density. The one with abrasive density of 585 per mm could cut 4.949 mm~2/min, 138% higher than that of the compared saw which has abrasive density of 446 per mm and efficiency of 2.158 mm~2/min. In addition, there is no big difference on surface quality of silicon wafer machined by wire saws with different abrasive density. The main wear or damage patterns of wire saw are abrasive wear, grain shedding and coating wear and damage.
引文
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