摘要
二维蜂巢状结构的石墨烯拥有独特的电学特性,其极高的电子迁移率、异常的量子霍尔效应、室温下亚微米尺度的弹道输运特性使之成为电子元器件研究的热点。简要介绍了近年来石墨烯电学方面的发展概况,其中包括晶界、晶畴对电学性能的影响,石墨烯场效应晶体管,石墨烯量子点,石墨烯pn结,石墨烯电学性能在磁场中的应用和石墨烯相关衍生物的电学性质。
Two-dimensional honeycomb structure of graphene has unique electrical properties,its ultra high electron mobility,unusual quantum Hall effect,ballistic transport properties on sub-micron at room temperature make electronic components research hotspot.The general situation of the development of graphene electrical in recent years are introduced,including grain boundary and domain on its electrical properties,graphene field effect transistor,graphene quantum dots,graphene p-n junction,graphene electrical properties in the application of magnetic field and the electrical properties of graphene related derivatives.
引文
1 Geim A K,Novoselov K S.The rise of graphene[J].Nat Mater,2007,6(3):183
2 Bolotin K I,Sikes K J,Jiang Z,et al.Ultrahigh electron mobility in suspended graphene[J].Solid State Commun,2008,146(9):351
3 Nakada K,Fujita M,Dresselhaus G,et al.Edge state in graphene ribbons:Nanometer size effect and edge shape dependence[J].Phys Rev B,1996,54(24):17954
4 Rozhkov A V,Savel′Ev S,Nori F.Electronic properties of armchair graphene nanoribbons[J].Phys Rev B,2009,79(12):125420
5 Liu F,Ming P,Li J.Ab initio calculation of ideal strength and phonon instability of graphene under tension[J].Phys Rev B,2007,76(6):064120
6 Gui G,Li J,Zhong J.Band structure engineering of graphene by strain:First-principles calculations[J].Phys Rev B,2008,78(7):075435
7 Wallace P R.The band theory of graphite[J].Phys Rev,1947,71(9):622
8 Saito R,Dresselhaus G,Dresselhaus M S.Physical properties of carbon nanotubes[M].London:Imperial College Press,1998
9 Reich S,Maultzsch J,Thomsen C,et al.Tight-binding description of graphene[J].Phys Rev B,2002,66(3):035412
10 Guo-Ping J Z F T,Yong-Jin J.Effect of the non-nearestneighbor hopping on the electronic structure of armchair graphene nanoribbons[J].Acta Phys Sinica,2009,12:65
11 Basko D M.Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene[J].Phys Rev B,2009,79(20):205428
12 Akhmerov A R,Beenakker C W J.Boundary conditions for Dirac fermions on a terminated honeycomb lattice[J].Phys Rev B,2008,77(8):085423
13 McCann E,Fal′ko V I.Symmetry of boundary conditions of the Dirac equation for electrons in carbon nanotubes[J].J Phys:Condensed Matter,2004,16(13):2371
14 Tsen A W,Brown L,Levendorf M P,et al.Tailoring electrical transport across grain boundaries in polycrystalline graphene[J].Science,2012,336(6085):1143
15 Yazyev O V,Louie S G.Electronic transport in polycrystalline graphene[J].Nat Mater,2010,9(10):806
16 Schwierz F.Graphene transistors[J].Nat Nanotechn,2010,5(7):487
17 Meric I,Han M Y,Young A F,et al.Current saturation in zero-bandgap,top-gated graphene field-effect transistors[J].Nat Nanotechn,2008,3(11):654
18 Moon J S,Curtis D,Hu M,et al.Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates[J].Electron Device Lett,IEEE,2009,30(6):650
19 Li X,Cai W,An J,et al.Large-area synthesis of high-quality and uniform graphene films on copper foils[J].Science,2009,324(5932):1312
20 Novoselov K S,Geim A K,Morozov S V,et al.Electric field effect in atomically thin carbon films[J].Science,2004,306(5696):666
21 Lemme M C,Echtermeyer T J,Baus M,et al.A graphene field-effect device[J].IEEE Electron Dev Lett,2007,28:282
22 Meric I,Baklitskaya N,Kim P,et al.RF performance of top-gated,zero-bandgap graphene field-effect transistors[C]//California San Francisco:IEEE International Electron Devices Meeting.San Fancisco,2008:1
23 Lin Y M,Dimitrakopoulos C,Jenkins K A,et al.100-GHz transistors from wafer-scale epitaxial graphene[J].Science,2010,327(5966):662
24 Liao L,Bai J,Qu Y,et al.High-κoxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors[J].Proceed National Academy Sci,2010,107(15):6711
25 Rozhkov A V,Nori F.Exact wave functions for an electron on a graphene triangular quantum dot[J].Phys Rev B,2010,81:155401
26 Giavaras G,Maksym P A,Roy M.Magnetic field induced confinement-deconfinement transition in graphene quantum dots[J].J Phys:Condensed Matter,2009,21(10):102201
27 Cheianov V V,Fal′ko V I.Selective transmission of Dirac electrons and ballistic magnetoresistance of n-p junctions in graphene[J].Phys Rev B,2006,74(4):41403
28 Cayssol J,Huard B,Goldhaber-Gordon D.Contact resistance and shot noise in graphene transistors[J].Phys Rev B,2009,79:75428
29 Ghosh S,Sharma M.Electron optics with magnetic vector potential barriers in graphene[J].J Phys:Condensed Matter,2009,21(29):292204
30 Levy N,Burke S A,Meaker K L,et al.Strain-induced pseudo-magnetic fields greater than 300tesla in graphene nanobubbles[J].Science,2010,329(5991):544
31 Dua V,Surwade S P,Ammu S,et al.All-organic vapor sensor using inkjet-printed reduced graphene oxide[J].Angew Chem Int Ed,2010,49(12):2154
32 Pan Z,Liu N,Fu L,et al.Wrinkle engineering:A new approach to massive graphene nanoribbon arrays[J].J Am Chem Soc,2011,133(44):17578