摘要
采用808nm大功率半导体激光器巴条进行了封装实验,对影响封装质量的两个重要因素,即管炉温度和烧结时间进行了优化。结果表明,在管炉温度为650℃、烧结时间为100s时,焊料层界面空洞最少,半导体激光器巴条的smile效应值最低,阈值电流最小,波长更加稳定,烧结质量最优。
The 808 nm high-power semiconductor laser bars are used for packaging to optimize the two important factors that affect the package quality:the furnace tube temperature and the soldering time.The results show that the solder layer has the least voids when the soldering time is 100 sat a tube furnace temperature of 650 ℃.Moreover,the obtained semiconductor laser bar has the lowest smile effect value,the smallest threshold current,a more stable wavelength,and the best soldering quality.
引文
[1] Xin G F,Qu R H,Fang Z J,et al.New development of high power semiconductor laser[J]. Laser&Optoelectronics Progress,2006,43(2):3-8.辛国锋,瞿荣辉,方祖捷,等.大功率半导体激光器的最新进展[J].激光与光电子学进展,2006,43(2):3-8.
[2] Ma X Y,Wang J,Liu S P.Present situation of investigations and applicationsin highpower semiconductor lasers[J]. Infrared and Laser Engineering,2008(2):189-194.马骁宇,王俊,刘素平.国内大功率半导体激光器研究及应用现状[J].红外与激光工程,2008(2):189-194.
[3] Jing H Q,Zhong L,Ni Y X,et al.Thermal analysis of high power density laser diode stack cooling structure[J].Chinese Journal of Luminescence,2016,37(1):81-87.井红旗,仲莉,倪羽茜,等.高功率密度激光二极管叠层散热结构的热分析[J].发光学报,2016,37(1):81-87.
[4] Jin G Q. Array technology of high power semiconductor laser[J].Laser&Optoelectronics Progress,2001,38(8):31-35.金菊其.大功率半导体激光器的阵列化技术[J].激光与光电子学进展,2001,38(8):31-35.
[5] Xiong H P,Li X H, Mao W,et al. Wetting behavior of Co based active brazing alloys on SiC and the interfacial reactions[J].Materials Letters,2003,57(22/23):3417-3421.
[6] Xi D M. Research on high-frequency packaging technology of high power semiconductor laser[D].Changchun:Changchun University of Science and Technology,2013.席道明.大功率半导体激光器高频封装技术研究[D].长春:长春理工大学,2013.
[7] Xin G F,Qu R H,Chen G T,et al.Packaging techniques of high power semiconductor laser arrays[J].Laser&Optoelectronics Progress,2005,42(8):54-57.辛国锋,瞿荣辉,陈高庭,等.大功率半导体激光器阵列的封装技术[J].激光与光电子学进展,2005,42(8):54-57.
[8] Geng L,Ma X,Xiao Z T,et al.Calibration and filtering of X-ray line array detector[J].Infrared and Laser Engineering,2017,46(12):1226001.耿磊,马潇,肖志涛,等.X射线线阵探测器校正与滤波[J].红外与激光工程,2017,46(12):1226001.
[9] Yoon J W,Chun H S,Koo J M,et al.Au-Sn flipchipsolderbumpformicroelectronicand optoelectronicapplications[J]. Microsystem Technologies,2007,13(11/12):1463-1469.
[10] Yu D Q,Oppermann H,Kleff J,et al.Stability of AuSn eutectic solder cap on Au socket during reflow[J].Journal of Materials Science:Materials in Electronics,2009,20(1):55-59.
[11] Wang X P,Li Z J,Liu Y,et al.Smile effect and package technique for diode laser arrays[J].Optics and Precision Engineering,2010,18(3):552-557.王祥鹏,李再金,刘云,等.半导体激光器列阵的smile效应与封装技术[J].光学精密工程,2010,18(3):552-557.
[12] Guo L H.Study on measurement of packaginginduced stress in high-power diode laser arrays[D].Changchun:Changchun University of Science and Technology,2009.郭林辉.大功率二极管激光线阵封装中的应力检测方法研究[D].长春:长春理工大学,2009.
[13] Jia G N,Yao S,Pan F,et al.Smile effect of laser diode arrays measured by stylus scan method[J].Infrared and Laser Engineering,2015,44(12):3576-3579.贾冠男,尧舜,潘飞,等.探针扫描法快速测量半导体激光阵列Smile效应[J].红外与激光工程,2015,44(12):3576-3579.
[14] Chen H,Li J,Zhou X L,et al.Measures to reduce smile effect of semiconductor laser diode arrays caused by packaging thermal stress[J].Chinese Journal of Luminescence,2017,38(5):656-662.陈华,李静,周兴林,等.封装热应力致半导体激光器“Smile”效应的抑制方法[J].发光学报,2017,38(5):656-662.
[15] Zhang Y,Yang R X,An Z F,et al.Study on packaging-induced stress in 4mm cavity length highpower single emitter semiconductor laser[J].Spectroscopy and Spectral Analysis,2014,34(6):1441-1445.张勇,杨瑞霞,安振峰,等.4mm腔长高功率单管半导体激光器封装应力的研究[J].光谱学与光谱分析,2014,34(6):1441-1445.
