摘要
随着高压大功率IGBT器件容量的进一步提升,对考核其可靠性的功率循环测试装备在测量精度、测试效率和长期运行可靠性等方面提出了挑战。针对柔性直流输电系统用高压大功率IGBT器件的测试需求,基于现有功率循环测试方法,增加了测试支路和辅助支路,提高了测试装备的测量精度和测试效率,增强了装备的长期运行可靠性,搭建了90 kW/3 000 A功率循环测试装备。针对应用于柔性直流输电的两种不同封装形式高压大功率IGBT器件——压接型IGBT器件和焊接式IGBT模块分别设计了相应的测试夹具,满足了柔性直流输电工程的需求,并基于此装备对不同封装形式和电流等级的器件进行了400多万次的功率循环测试,验证了测试装备的测试功能和长期运行可靠性。
Power cycling test equipment with higher accuracy, efficiency and long life-time reliability is strongly needed to meet the requirements of high power IGBTs with higher power density. A 90 kW/3 000 A power cycling test equipment was built according to the requirements of high power IGBTs applied in the flexible HVDC transmission system. Based on the basic test circuit of the power cycling test, two test branches and one auxiliary branch were added to improve the test accuracy, efficiency and long life-time reliability of the test equipment. the corresponding test fixtures were respectively designed for press pack IGBTs and power IGBT modules which were two different packaging styles of high-voltage and high-power IGBT devices to meet the requirements of the flexible HVDC transmission system. More than 4 000 000 cycles in total have been conducted for different packaging styles and current ratings up to now by this equipment. The basic test functions and long life-time reliability of this power cycling test equipment are verified by these cycles.
引文
[1] 汤广福, 贺之渊, 庞辉. 柔性直流输电工程技术研究、应用及发展[J]. 电力系统自动化, 2013, 37(15):3-14.TANG G F, HE Z Y, PANG H. Research, application and development of VSC-HVDC engineering technology[J]. Automation of Electric Power Systems, 2013, 37(15):3-14(in Chinese).
[2] 汤广福, 王高勇, 贺之渊,等. 张北500 kV直流电网关键技术与设备研究[J]. 高电压技术, 2018,44(7):2097-2106.TANG G F, WANG G Y, HE Z Y, et al. Research on key technology and equipment for Zhangbei 500 kV DC grid[J]. High Voltage Engineering, 2018, 44(7): 2097-2106(in Chinese).
[3] 李英彪,梁军,吴广禄,等. 多电压等级直流电力系统发展与挑战[J]. 发电技术,2018, 39(2):118-128.LI Y B, LIANG J, WU G L, et al. Development and challenge of DC power system with different voltage levels [J]. Power Generation Technology, 2018,39(2):118-128(in Chinese).
[4] IEC 60747-9: Semiconductor devices—discrete devices—part 9: insulated-gate bipolar transistors (IGBTs) [S]. International Electrotechnical Commission,2007.
[5] AUERBACH F, LENNIGER A. Power-cycling-stability of IGBT-modules[C]//Proceedings of the 32th IEEE Industry Applications Society Annual Meeting. New Orleans, LA, USA, 1997: 1248-1252.
[6] MOROZUMI A, YAMADA K, MIYASAKA T, et al. Reliability of power cycling for IGBT power semiconductor modules[J]. IEEE Transactions on Industry Applications, 2003, 39(3):665-671.
[7] 李双杰,莫长宇,陈俊峰,等.柔性高压直流输电阀组电气参数以及典型运行维护研究[J]. 新型工业化,2017,7(8):5-10.LI S J, MO C Y, CHEN J F, et al. Status on electrical parameters and typical operation and maintenance of valve of VSC-HVDC[J]. The Journal of New Industrialization, 2017,7(8) :5-10(in Chinese).
[8] LUTZ J, SCHLANGENOTTO H, SCHEUERMANN U, et al.Semiconductor Power Devices[M].USA: Springer Berlin Heidelberg, 2010:343-418.
[9] DENG E P, ZHAO Z B, XIN Q M, et al. Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs[J]. Microelectronics Reliability, 2017, 78:25-37.
[10] HEROLD C, FRANKE J, BHOJANI R, et al. Requirements in power cycling for precise lifetime estimation [J]. Microelectronics Reliability, 2016, 58:82-89.
[11] IEC 60749-34: Semiconductor devices—mechanical and climatic test methods—part 34: power cycling [S] International Electrotechnical Commission,2011.
[12] COQUERY G, LALLEMAND R. Failure criteria for long term accelerated power cycling test linked to electrical turn off SOA on IGBT module. A 4 000 hours test on 1 200 A-3 300 V module with AlSiC base plate [J]. Microelectronics Reliability, 2000, 40(8/9/10):1665-1670.
[13] LUTZ J, HERRMANN T, FELLER M, et al. Power cycling induced failure mechanisms in the viewpoint of rough temperature environment[C]//Proceedings of the 5th International Conference on Integrated Power Electronics Systems. Nuremberg, Germany, 2008: 1-4.
[14] ASIMAKOPOULOS P, PAPASTERGIOU K D, THIRINGER T, et al. On Vce method: in-situ temperature estimation and aging detection of high-current IGBT modules used in magnet power supplies for particle accelerators [J]. IEEE Transactions on Industrial Electronics, 2019, 66 (1):551-560.
[15] SCHMIDT R, SCHEUERMANN U. Using the chip as a temperature sensor—the influence of steep lateral temperature gradients on the VCE(T)-measurement[J]. EPE Journal, 2011, 21(2):5-11.
[16] LOW K Y C. The theory, practice and application of thermal resistance measurements of IGBT devices [C]// Proceedings of the 34th IEEE/CPMT International Electronics Manufacturing Technology Symposium. Melaka, Malaysia, 2010:1-10.
[17] 邓二平, 赵志斌, 张朋,等. 压接型IGBT器件内部压力分布[J]. 电工技术学报, 2017, 32(6):201-208.DENG E P, ZHAO Z B, ZHANG P, et al. Clamping force distribution within press pack IGBTs[J]. Tran-sactions of China Electrotechnical Society, 2017, 32(6):201-208(in Chinese).
[18] 赵志斌, 邓二平, 张朋,等. 换流阀用与直流断路器用压接型IGBT器件差异分析[J]. 电工技术学报, 2017, 32(19):125-133.ZHAO Z B, DENG E P, ZHANG P, et al. Review of the difference between the press pack IGBT using for converter value and for DC breaker[J]. Transactions of China Electrotechnical Society, 2017, 32(19):125-133 (in Chinese).
