无铅铁电薄膜掺杂改性的研究进展
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  • 英文篇名:Progress in modifyinglead-free ferroelectric thin film materials by doping
  • 作者:张胜安 ; 李扬 ; 夏功婷 ; 戴健 ; 施澄虞
  • 英文作者:ZHANGSheng-an;LI Yang;XIA Gong-ting;DAI Jian;SHI Cheng-yu;College of Materials science and Technology ,Nanjing University of Aeronautics and Astronautics;
  • 关键词:无铅 ; 铁电薄膜 ; 掺杂
  • 英文关键词:lead-free;;ferroelectric thin film;;doping
  • 中文刊名:GNCQ
  • 英文刊名:Journal of Functional Materials and Devices
  • 机构:南京航空航天大学材料科学与技术学院;
  • 出版日期:2015-10-25
  • 出版单位:功能材料与器件学报
  • 年:2015
  • 期:v.21
  • 基金:江苏高校优势学科建设工程资助项目
  • 语种:中文;
  • 页:GNCQ201505011
  • 页数:6
  • CN:05
  • ISSN:31-1708/TB
  • 分类号:57-62
摘要
无铅铁电薄膜作为一种环境友好型的材料符合未来新材料发展的趋势与潮流,具有不可限量的发展前景。本文主要综述了四种体系(BFO、KNN、BNT、BTO)下的无铅铁电薄膜通过掺杂改性,提高薄膜的铁电性能的研究进展。最后指出了这类材料研究存在的主要问题以及未来研究的主要方向。
        As a kind of environment-friendly material,the lead-free ferroelectric thin film meets the need of the future development and has limitless prospects. However,its performance needs to be improved. This paper mainly summarizes the research progress of improving ferroelectric performance of the thin film,by doping modification of four systems. Finally,it points out the main problems of this kind of materials as well as the main direction of future research.
引文
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