Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH_3 plasma pretreatment

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英文篇名：Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH_3 plasma pretreatment 作者：Hui ; Hao ; Xiao ; Chen ; Zhengcheng ; Li ; Yang ; Shen ; Hu ; Wang ; Yanfei ; Zhao ; Rong ; Huang ; Tong ; Liu ; Jian ; Liang ; Yuxin ; An ; Qing ; Peng ; Sunan ; Ding 英文作者：Hui Hao;Xiao Chen;Zhengcheng Li;Yang Shen;Hu Wang;Yanfei Zhao;Rong Huang;Tong Liu;Jian Liang;Yuxin An;Qing Peng;Sunan Ding;College of Materials Science and Engineering, Taiyuan University of Technology;Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS); 英文关键词：Ga-oxide;;RPEALD;;passivation;;NH_3 plasma 中文刊名：BDTX 英文刊名：半导体学报(英文版) 机构：College of Materials Science and Engineering, Taiyuan University of Technology;Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS); 出版日期：2019-01-15 出版单位：Journal of Semiconductors 年：2019 期：v.40 基金：supported jointly by the National Natural Science Foundation of China(Nos.61674165,61604167,61574160,61704183,61404159,11604366);; the Natural Science Foundation of Jiangsu Province(Nos.BK20170432,BK20160397,BK20140394);; the National Key R&D Program of China(No.2016YFB0401803);; the Strategic Priority Re-search Program of the Chinese Academy of Science(No.XDA09020401);; the support at the Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences 语种：英文; 页：BDTX201901017 页数：7 CN：01 ISSN：11-5781/TN 分类号：97-103

摘要

High quality gallium oxide(Ga_2O_3) thin films are deposited by remote plasma-enhanced atomic layer deposition(RPEALD) with trimethylgallium(TMG) and oxygen plasma as precursors. By introducing in-situ NH3 plasma pretreatment on the substrates, the deposition rate of Ga_2O_3 films on Si and GaN are remarkably enhanced, reached to 0.53 and 0.46 ?/cycle at 250 °C,respectively. The increasing of deposition rate is attributed to more hydroxyls(–OH) generated on the substrate surfaces after NH3 pretreatment, which has no effect on the stoichiometry and surface morphology of the oxide films, but only modifies the surface states of substrates by enhancing reactive site density. Ga_2O_3 film deposited on GaN wafer is crystallized at 250 °C, with an epitaxial interface between Ga_2O_3 and GaN clearly observed. This is potentially very important for reducing the interface state density through high quality passivation.
        High quality gallium oxide(Ga_2O_3) thin films are deposited by remote plasma-enhanced atomic layer deposition(RPEALD) with trimethylgallium(TMG) and oxygen plasma as precursors. By introducing in-situ NH3 plasma pretreatment on the substrates, the deposition rate of Ga_2O_3 films on Si and GaN are remarkably enhanced, reached to 0.53 and 0.46 ?/cycle at 250 °C,respectively. The increasing of deposition rate is attributed to more hydroxyls(–OH) generated on the substrate surfaces after NH3 pretreatment, which has no effect on the stoichiometry and surface morphology of the oxide films, but only modifies the surface states of substrates by enhancing reactive site density. Ga_2O_3 film deposited on GaN wafer is crystallized at 250 °C, with an epitaxial interface between Ga_2O_3 and GaN clearly observed. This is potentially very important for reducing the interface state density through high quality passivation.

引文

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