摘要
高功率脉冲磁控溅射技术被提出以来就受到业界广泛关注,其较高的溅射材料离化率结合适当的电磁控制,可产生高致密度、高结合力和高综合性能的涂层,但其沉积速率低、放电不稳定、溅射材料离化率差异较大,我们设计了一种筒形溅射源,通过对结构的设计优化,利用类空心阴极放电效应,使问题得到解决。然而其靶面切向磁场不均匀,电子逃逸严重,进而造成等离子体密度偏低,且放电不均匀。本文通过对其放电和等离子体分布进行仿真,提出电场阻挡和磁铁补偿两种方案,研究了不同电场控制条件下的放电行为和等离子体分布。结果表明,增加电子阻挡屏极可以生成势阱,从而有效抑制电子从边缘的逸出;优化后的磁铁补偿可以显著提高靶面横向磁场的均匀性及靶面利用率。两种方案同时作用时,HiPIMS放电刻蚀环面积更大、且更加均匀。
High power impulse magnetron sputtering(HiPIMS),which combines high ionization rates of sputtering materials and control of electromagnetism,has been widely used to deposit high-performance coatings with large densities and high adhesion.However,HiPIMS has some intrinsic disadvantages such as low deposition rate,unstable discharge,and different ionization rates for different materials thereby hampering wider adoption by the industry.We have recently designed an optimized cylindrical source based on the hollow cathode effect to circumvent the aforementioned limitations.However,the tangential magnetic field distribution on the target surface of the cylindrical sputtering source is inhomogeneous and electron runaway is serious,resulting in a small plasma density and inhomogeneous discharge.Herein,two solutions are proposed.The first one is electrical improvement by installing an electron blocking plate and the other one is magnetic improvement by adding compensation magnets.Our results show that a potential well is produced by the electron blocking plate to suppress electron runaway.The homogeneity of the tangential magnetic field distribution on the target surface and target utilization are significantly improved by the second method of magnetic improvement.Furthermore,by combining the two techniques,a larger and more homogeneous etching ring is observed.
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