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Elsevier电子期刊(5)
在“
Elsevier电子期刊
”中,
命中:
5
条,耗时:小于0.01 秒
在所有数据库中总计命中:
5
条
1.
G
rowth initiation for buried-heterostructure quantum-cascade laser re
g
rowth by
g
as-source molecular-beam epitaxy
作者:
Y.V. Flores
;
floresyu@physik.hu-berlin.de" class="auth_mail
;
M. Ela
g
in
;
S.S. Kurlov
;
A. Aleksandrova
;
G
.
Monastyrskyi
;
J. Kischkat
;
M.P. Semtsiv
;
W.T. Masselink
关键词:
A3. Molecular beam epitaxy
;
A3. Semiconductin
g
III&ndash
;
V materials
;
B3. Heterojunction semiconductor devices
;
B3. Infrared devices
刊名:Journal of Crystal
G
rowth
出版年:15 July 2014
2.
Correlation of the MBE
g
rowth temperature, material quality, and performance of quantum cascade lasers
作者:
G
.
Monastyrskyi
;
A. Aleks
;
rova
;
M. Ela
g
in
;
M.P. Semtsiv
;
W.T. Masselink
;
V. Bryksa
关键词:
A3. Molecular beam epitaxy
;
B2. Semiconductin
g
III&ndash
;
V materials
;
B3. Heterojunction semiconductor devices
;
B3. Infrared devices
刊名:Journal of Crystal
G
rowth
出版年:2013
3.
Semi-insulatin
g
InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers
g
rown by
g
as-source molecular-beam epitaxy
作者:
M.P. Semtsiv
;
A. Aleks
;
rova
;
M. Ela
g
in
;
G
.
Monastyrskyi
;
J.-F. Kischkat
;
Y.V. Flores
;
W.T. Masselink
关键词:
A3. Molecular-beam epitaxy
;
B2. Semiconductin
g
III&ndash
;
V materials
;
B3. Heterojunction semiconductor devices
;
B3. Infrared devices
刊名:Journal of Crystal
G
rowth
出版年:2013
4.
Scalin
g
the output power of quantum-cascade lasers with a number of cascades
作者:
O. Fedosenko
;
a
;
oliana@physik.hu-berlin.de"" rel=""nofollow
;
oliana.fedosenko@
g
mail.com"" rel=""nofollow
;
M. Chashnikova
a
;
S. Machulik
a
;
J. Kischkat
a
;
M. Klinkmü
;
ller
a
;
A. Aleksandrova
a
;
G
.
Monastyrskyi
a
;
M.P. Semtsiv
a
;
W.T. Masselink
a
关键词:
A2.
G
rowth from hi
g
h-temperature solutions
;
A3. Molecular beam epitaxy
;
B2. Semiconductin
g
indium phosphide
;
B2. Semiconductin
g
aluminum compounds
;
B3. Infrared devices
刊名:Journal of Crystal
G
rowth
出版年:2011
5.
InP-based mid-infrared quantum-cascade laser
g
rown on pre-patterned wafer
作者:
O. Fedosenko
;
a
;
oliana@physik.hu-berlin.de"" rel=""nofollow
;
M. Chashnikova
a
;
S. Machulik
a
;
J. Kischkat
a
;
M. Klinkmü
;
ller
a
;
A. Aleksandrova
a
;
G
.
Monastyrskyi
a
;
M.P. Semtsiv
a
;
T.W. Masselink
a
关键词:
A3. Molecular beam epitaxy
;
B2. Semiconductin
g
indium phosphide
;
B2. Semiconductin
g
aluminum compounds
;
B3. Infrared devices
刊名:Journal of Crystal
G
rowth
出版年:2011
1
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2013年(2)
2011年(2)
2000年及以前(1)
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