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在“
Elsevier电子期刊
”中,
命中:
2,519
条,耗时:0.0579683 秒
在所有数据库中总计命中:
4,523
条
1.
Resistive
switching
behavior
s of Ti nano-layer embedded TaO
x
-based devices
作者:
Heeyoung Jeon
a
;
Jingyu Park
a
;
Woochool Jang
b
;
Hyunjung Kim
a
;
Kunyoung Lee
b
;
Changhee Shin
a
;
Jaemin Lee
a
;
Hyeongtag Jeon
a
;
b
;
hjeon@hanyang.ac.kr
关键词:
Resistive
switching
;
Interface
;
TaOx
;
Non-linear
;
Current compliance
刊名:Current Applied Physics
出版年:2017
2.
Unipolar resistive
switching
behavior
of amorphous SrMoO
4
thin films deposited at room temperature
作者:
L. Hu
a
;
huling@issp.ac.cn
;
G.T. Lin
a
;
R.H. Wei
a
;
X. Luo
a
;
X.W. Tang
a
;
X.B. Zhu
a
;
W.H. Song
a
;
J.M. Dai
a
;
Y.P. Sun
a
;
b
;
c
;
ypsun@issp.ac.cn
关键词:
Resistive random access memory
;
Resistive
switching
;
Conducting filament
;
Molybdate
;
Thin film
刊名:Ceramics International
出版年:2017
3.
The effect of phase assemblages, grain boundaries and domain structure on the local
switching
behavior
of rare-earth modified bismuth ferrite ceramics
作者:
Denis O. Alikin
a
;
denis.alikin@urfu.ru
;
Anton P. Turygin
a
;
Julian Walker
b
;
c
;
Andreja Bencan
b
;
Barbara Malic
b
;
Tadej Rojac
b
;
Vladimir Ya. Shur
a
;
Andrei L. Kholkin
a
;
d
关键词:
Piezoceramics
;
Bismuth ferrite
;
Phase assemblage
;
Domain structure
;
Local
switching
;
Domain kinetics
;
Topological defects
刊名:Acta Materialia
出版年:2017
4.
Abnormal bipolar resistive
switching
behavior
in carbon-iron composite films with different thicknesses
作者:
J.W. Zhou
a
;
T.R. Li
a
;
D. Zhang
a
;
B. Ren
a
;
S.W. Zhang
a
;
J. Huang
a
;
J.M. Zhang
c
;
L. Wang
a
;
wanglinn@shu.edu.cn
;
Y.C. Jiang
b
;
J. Gao
b
;
L.J. Wang
a
;
ljwang@shu.edu.cn
关键词:
Resistive
switching
;
Amorphous carbon
;
Carbon-iron composite
;
Thickness
刊名:Vacuum
出版年:2017
5.
Complicated
behavior
s and bifurcation mechanism of the periodic parameter-
switching
Chen system
作者:
Chun Zhang
a
;
;
Xiu-jing Han
b
;
Qinsheng Bi
b
关键词:
Switched system
;
Floquet multiplies
;
Symmetric
switching
oscillation
;
Bifurcation mechanism
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
6.
Mechanical
behavior
of ferroelastic LaAlO
3
作者:
M.N. Islam
a
;
b
;
W. Araki
b
;
araki@mech.saitama-u.ac.jp
;
Y. Arai
b
关键词:
Mechanical
behavior
;
Lanthanum aluminate
;
Ferroelasticity
;
Domain
switching
;
Stress-strain relationship
刊名:Journal of the European Ceramic Society
出版年:2017
7.
Detection of resistive
switching
behavior
based on the Al
2
O
3
/ZnO/Al
2
O
3
structure with alumina buffers
作者:
Q. Qiao
a
;
D. Xu
a
;
Y.W. Li
a
;
ywli@ee.ecnu.edu.cn
;
J.Z. Zhang
a
;
Z.G. Hu
a
;
J.H. Chu
a
;
b
关键词:
Non-polar resistive
switching
;
Transition metal oxide
;
Sandwich structure
;
Buffer layer
刊名:Thin Solid Films
出版年:2017
8.
Travelers'
switching
behavior
in the airline industry from the perspective of the push-pull-mooring framework
作者:
Jishim Jung
jsjung0930@naver.com
Author Vitae
;
Heesup Han
;
heesup.han@gmail.com
Author Vitae
;
Mihae Oh
ohmihae@naver.com
Author Vitae
关键词:
Air travelers
;
Switching
intention
;
Push-pull-mooring (PPM) model
刊名:Tourism Management
出版年:2017
9.
Oxygen vacancy and film crystallization effects on resistive
switching
behavior
s of CuAlO
x
thin films
作者:
Yow-Jon Lin
a
;
b
;
rzr2390@yahoo.com.tw" class="auth_mail" title="E-mail the corresponding author
;
Yu-Ju Chu
a
关键词:
Thin films
;
Oxides
;
Defects
;
Resistive
switching
;
Electrical properties
刊名:Journal of Alloys and Compounds
出版年:2017
10.
Coexistence of bipolar and unipolar resistive
switching
characteristics of thin TiO
2
film grown on Cu foil substrate for flexible nonvolatile memory device
作者:
Hongjun Wang
a
;
balu7015@hotmail.com
;
Yuanyuan Zhu
a
;
zhuyuanyuan@whu.edu.cn
;
Dejun Fu
b
关键词:
Resistive
switching
;
TiO2
;
Memory device
;
Conducting filaments
刊名:Journal of Alloys and Compounds
出版年:2017
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