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在“Elsevier电子期刊”中，命中：9条，耗时：0.0679669 秒

1.Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

作者：Jaya Madan ^{jayamadan.2012@gmail.com} ; Rishu Chaujar ; ^{rishu.phy@dce.edu}

关键词：Band to band tunneling (BTBT) ; Source pocket ; Gate-drain underlapping (GDU) ; Parasitic capacitance ; Tunneling FET (TFET)

刊名：Superlattices and Microstructures

出版年：2017

2.Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated rear contact silicon tandem solar cell

作者：Rahul Pandey ; Rishu Chaujar ; ^{Rishu.phy@dce.edu}

关键词：Perovskite ; Organic-inorganic halide ; Silicon ; Simulation ; Solar cell ; Tandem

刊名：Superlattices and Microstructures

出版年：2016

3.Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

作者：Jaya Madan ^{jayamadan@dtu.ac.in} ; Rishu Chaujar ; ^{rishu.phy@dce.edu}

关键词：Gas sensor ; Gas adsorption ; Hetero gate dielectric ; Tunnel FET

刊名：Superlattices and Microstructures

出版年：2016

4.Numerical simulation of rear contact silicon solar cell with a novel front surface design for the suppression of interface recombination and improved absorption

作者：Rahul Pandey ; Rishu Chaujar ; ^{Rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author}

关键词：Absorption ; Recombination ; Solar cell ; Silicon carbide (SiC) ; ZrO2

刊名：Current Applied Physics

出版年：2016

5.Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET

作者：Neha Gupta ^{nehagupta@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author} ; Rishu Chaujar ; ^{rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author}

关键词：Gate stack ; Gate electrode workfunction engineering ; Analog ; Linearity ; Harmonic distortion ; Silicon nanowire

刊名：Superlattices and Microstructures

出版年：2016

6.TCAD RF performance investigation of Transparent Gate Recessed Channel MOSFET

作者：Ajay Kumar ^{ajaykumar@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author} ; Neha Gupta ^{nehagupta@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author} ; Rishu Chaujar ; ^{rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author}

关键词：CRC-MOSFET ; Cut-off frequency ; Parasitic capacitance ; Power gain ; RF ; TGRC-MOSFET

刊名：Microelectronics Journal

出版年：2016

7.Power gain assessment of ITO based Transparent Gate Recessed Channel (TGRC) MOSFET for RF/wireless applications

关键词：CRC-MOSFET ; Intrinsic delay ; ITO ; Power gains ; RF ; TGRC-MOSFET

刊名：Superlattices and Microstructures

出版年：2016

8.Rear contact SiGe solar cell with SiC passivated front surface for >90-percent external quantum efficiency and improved power conversion efficiency

作者：Rahul Pandey ; Rishu Chaujar ; ^{Rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author}

关键词：ATLAS ; Rear contact ; Power conversion efficiency ; Recombination ; SiGe ; Solar cell

刊名：Solar Energy

出版年：2016

9.AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications

作者：Priyanka Malik^a ; ^{prink.malik@gmail.com} ; R.S. Gupta^b ; ^{rsgu@bol.net.in} ; Rishu Chaujar^c ; ^{rishu.phy@dce.edu} ; Mridula Gupta^a ; ^{mridula@south.du.ac.in}

刊名：Microelectronics Reliability

出版年：2012

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