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在“Elsevier电子期刊”中，命中：983条，耗时：小于0.01 秒

1.Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode

作者：S. Amor^a ; ^b ; A. Ahaitouf^a ; Az Ahaitouf^c ; J.P. Salvestrini^b ; ^d ; ^{jean-paul.salvestrini@univ-lorraine.fr} ; A. Ougazzaden^d

关键词：DLTS ; Carrier traps ; GaN ; Schottky diode

刊名：Superlattices and Microstructures

出版年：2017

2.Investigation of defects in indium doped TiO₂ thin films using electrical and optical techniques

作者：Noor Alhuda Al Saqri^a ; ^b ; ^{ppxnaal@nottingham.ac.uk} ; Aniruddha Mondal^c ; Jorlandio Francisco Felix^d ; Yara Galvã ; o Gobato^e ; Vanessa Orsi Gordo^e ; Hind Albalawi^a ; Dler Jameel^a ; ^f ; Haifa Alghamdi^a ; Faisal Al Mashary^a ; David Taylor^a ; Mahmmoud S. Abd El-sadek^g ; Mohamed Henini^a

关键词：TiO2 ; In doping ; I&ndashV ; DLTS ; PL

刊名：Journal of Alloys and Compounds

出版年：2017

3.Investigation of a combined platinum and electron lifetime control treatment for silicon

作者：Yunpeng Jia^a ; Zhihang Cui^a ; ^{czhczh321321@126.com} ; Fei Yang^b ; Bao Zhao^a ; Shikai Zou^a ; Yongsheng Liang^a

关键词：Platinum ; Electron irradiation ; Combined Lifetime Treatment ; Lifetime

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2017

4.Current transport and deep levels in p-Si/n-Zn_0.9Mg_0.1O/n-ZnO heterojunction

作者：K.M. Paradowska^a ; ^{karolina.paradowska@pwr.edu.pl" class="auth_mail" title="E-mail the corresponding author} ; E. Płaczek-Popko^a ; M.A. Pietrzyk^b ; K. Gwó ; źdź^a ; A. Kozanecki^b

关键词：Zinc oxide ; Deep level transient spectroscopy ; Current transport ; Deep levels

刊名：Journal of Alloys and Compounds

出版年：2017

5.Electrical Characterisation of electron beam exposure induced Defects in silicon

作者：Helga T. Danga ; ^{helga.danga@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; Francois D. Auret ; Sergio M.M. Coelho ; Mmantsae Diale

关键词：Silicon ; Electron beam exposure ; DLTS ; Laplace-DLTS

刊名：Physica B: Physics of Condensed Matter

出版年：2016

6.Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

作者：Ezekiel Omotoso^a ; ^b ; ^{ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; Walter E. Meyer^a ; ^{wmeyer@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; F. Danie Auret^a ; Alexander T. Paradzah^a ; Matshisa J. Legodi^a

关键词：DLTS ; 4H-SiC ; Alpha-particle irradiation ; Annealing ; Schottky barrier diode

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2016

作者：I. Capan^a ; Ž. Pastuović^b ; ^{zkp@ansto.gov.au" class="auth_mail" title="E-mail the corresponding author} ; R. Siegele^b ; R. Jaćimović^c

关键词：Ion implantation ; Silicon ; Defects ; Vacancy ; DLTS

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2016

8.Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

作者：T. Miyazaki^a ; T. Makino^b ; A. Takeyama^b ; S. Onoda^b ; T. Ohshima^b ; Y. Tanaka^c ; M. Kandori^c ; T. Yoshie^c ; Y. Hijikata^a ; ^{yasuto@opt.ees.saitama-u.ac.jp}

关键词：4H-SiC ; Gamma-ray irradiation ; Photoluminescence (PL) imaging ; Basal plane dislocation (BPD) ; Stacking fault ; Deep level transient spectroscopy (DLTS)

刊名：Superlattices and Microstructures

出版年：2016

9.Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

作者：E. Omotoso^a ; ^b ; ^{ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; ^{wmeyer@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; W.E. Meyer^a ; S.M.M. Coelho^a ; M. Diale^a ; P.N.M. Ngoepe^a ; F.D. Auret^a

关键词：4H-SiC ; Defects ; DLTS ; Annealing ; Electron beam deposition

刊名：Materials Science in Semiconductor Processing

出版年：2016

10.Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

作者：E. Omotoso^a ; ^b ; ^{ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; W.E. Meyer^a ; F.D. Auret^a ; M. Diale^a ; P.N.M. Ngoepe^a

关键词：DLTS ; Free carrier removal rate ; Carrier concentration ; 4H-SiC ; Alpha-particle irradiation

刊名：Physica B: Physics of Condensed Matter

出版年：2016

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