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在“
Elsevier电子期刊
”中,
命中:
1
条,耗时:0.0680025 秒
1.
Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement
作者:
Bhagwan Ram Raad
;
bhagwanramraad@
gmail
.com"
class
="auth_mail"
title
="E-mail the
corresponding
author
;
Kaushal
Nigam
kaushalnigam
3@
gmail
.com"
class
="auth_mail"
title
="E-mail the
corresponding
author
;
Dheeraj Sharma
dheeraj24482@
gmail
.com"
class
="auth_mail"
title
="E-mail the
corresponding
author
;
P.N. Kondekar
pnkondekar@iiitdmj.ac.in"
class
="auth_mail"
title
="E-mail the
corresponding
author
关键词:
Band to band tunneling (BTBT)
;
Bandgap engineering
;
Gate material work function engineering
;
Gate dielectric engineering
刊名:Superlattices and Microstructures
出版年:2016
1
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2016年(1)
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