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CNKI学位论文(1042)
CNKI期刊论文0611(2)
知网期刊论文(310)
在“
Elsevier电子期刊
”中,
命中:
216
条,耗时:0.0349782 秒
在所有数据库中总计命中:
1,354
条
1.
Computation of impurity concentration in silicon
photodiode
based on their optical properties
作者:
G. Palai
gpalai28@gmail.com
g_pallai@yahoo.co.uk
关键词:
Silicon
photodiode
;
Reflectance
;
Absorption factor
;
Dispersion
;
Transmitted intensity
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
2.
Design of broadband and high-output power uni-traveling-carrier
photodiode
s
作者:
Peng Zhang
a
;
Xiupu Zhang
a
;
johnxiupu.zhang@concordia.ca" class="auth_mail" title="E-mail the corresponding author
;
Rong Zhang
b
关键词:
Fiber&ndash
;
optic communications
;
Photodiode
s (PDs)
;
Photodetectors
;
Uni-traveling carrier
刊名:Optics Communications
出版年:2016
3.
Charge Transfer Inefficiency in Pinned
Photodiode
CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method
作者:
Alice Pelamatti
a
;
1
;
alice.pelamatti@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Vincent Goiffon
a
;
Aziouz Chabane
a
;
Pierre Magnan
a
;
Cé
;
dric Virmontois
b
;
Olivier Saint-Pé
;
c
;
Michel Breart de Boisanger
c
关键词:
CMOS image sensor
;
Pinned
Photodiode
;
Charge Transfer Inefficiency
;
Transfer time
刊名:Solid State Electronics
出版年:2016
4.
Light induced tunnel effect in CNT-Si
photodiode
作者:
C. Aramo
a
;
aramo@na.infn.it" class="auth_mail" title="E-mail the corresponding author
;
M. Ambrosio
a
;
C. Bonavolontà
;
a
;
b
;
M. Boscardin
c
;
P. Castrucci
d
;
M. Crivellari
c
;
M. De Crescenzi
d
;
C. de Lisio
a
;
b
;
E. Fiandrini
e
;
V. Grossi
f
;
P. Maddalena
a
;
b
;
M. Passacantando
f
;
S. Santucci
f
;
M. Scarselli
d
;
A. Valentini
g
;
M. Valentino
h
关键词:
Heterojunction
;
Multiwall carbon nanotubes
;
NDR
;
Photodetector
;
Tunneling
刊名:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
出版年:2016
5.
Nanosecond pulsed laser ablation of Ge investigated by employing photoacoustic deflection technique and SEM analysis
作者:
Nazish Yaseen
;
Shazia Bashir
;
Muhammad Kaif Shabbir
;
Sohail Abdul Jalil
;
Mahreen Akram
;
Asma Hayat
;
Khaliq Mahmood
;
Faizan-ul Haq
;
Riaz Ahmad
;
Tousif Hussain
关键词:
Laser ablation
;
Germanium
;
Photoacoustic deflection technique
;
Ablation threshold fluence
;
Incubation effect
;
Surface morphology
刊名:Physica B: Physics of Condensed Matter
出版年:2016
6.
HgCdTe barrier infrared detectors
作者:
M. Kopytko
;
malgorzata.kopytko@wat.edu.pl" class="auth_mail" title="E-mail the corresponding author
;
A. Rogalski
关键词:
HOT detectors
;
HgCdTe photodetectors
;
Barrier detectors
;
Type-II InAs/GaSb superlattice photodetectors
;
Sb-based III&ndash
;
V photodetectors
;
Dark current
刊名:Progress in Quantum Electronics
出版年:2016
7.
Soft tissue optical property extraction for carcinoma cell detection in diffuse optical tomography system under boundary element condition
作者:
K. Uma Maheswari
a
;
umaragsug@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
S. Sathiyamoorthy
b
;
sathyajayam@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Absorption coefficient
;
Scattering coefficient
;
Fluence rate
;
Diffuse reflectance
;
Near infrared
刊名:Optik - International Journal for Light and Electron Optics
出版年:2016
8.
Modeling of the charge transfer in a lateral drift field photo detector
作者:
Adrian Driewer
;
adrian.driewer@ims.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author
;
Bedrich J. Hosticka
;
Andreas Spickermann
;
Holger Vogt
关键词:
CMOS image sensor
;
Time-of-flight (ToF)
;
Charge transfer
;
Analytical modeling
;
LDPD
刊名:Solid State Electronics
出版年:2016
9.
Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer
作者:
Jinn-Kong Sheu
a
;
jksheu@mail.ncku.edu.tw" class="auth_mail" title="E-mail the corresponding author
;
Po-Cheng Chen
a
;
Yu-Hsiang Yeh
a
;
Shih-Hsun Kuo
a
;
Ming-Lun Lee
b
;
minglun@mail.stust.edu.tw" class="auth_mail" title="E-mail the corresponding author
;
Po-Hsun Liao
a
;
Wei-Chih Lai
a
关键词:
GaN
;
Ion implantation
;
Selective-area epitaxy
;
Maskless
刊名:Acta Materialia
出版年:2016
10.
A comparative experimental investigation on responsivity and response speed of photo-diode and photo-BJT
structures
integrated in a low-cost standard CMOS process
作者:
Nikola Katic
;
nikola.katic@epfl.ch" class="auth_mail" title="E-mail the corresponding author
;
Alexandre Schmid
;
Yusuf Leblebici
关键词:
Photo-diode
;
Photo-transistor
;
Responsivity
;
Standard CMOS
刊名:Microelectronics Journal
出版年:2015
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