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在“Elsevier电子期刊”中，命中：484条，耗时：小于0.01 秒

1.Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies

作者：Yux Xu^a ; ^b ; ^{yuex@njupt.edu.cn} ; Ping Xiang^a ; Xiaopeng Xie^a

关键词：Single photon avalanche diode (SPAD) ; Dark count rate (DCR) ; Deep sub-micron (DSM) CMOS technologies ; Geiger mode TCAD simulation

刊名：Solid-State Electronics

出版年：2017

2.Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

作者：M. Baselga ; G. Pellegrini ; ^{giulio.pellegrini@imb-cnm.csic.es} ; D. Quirion

关键词：3D-Si sensors ; ATLAS pixel upgrade ; TCAD simulation

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：2017

3.10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

作者：M. Ochoa^a ; ^{mario.ochoa@ies-def.upm.es" class="auth_mail" title="E-mail the corresponding author} ; E. Yaccuzzi^b ; ^c ; P. Espinet-Gonzá ; lez^a ; M. Barrera^b ; ^c ; E. Barrigó ; n^a ; M.L. Ibarra^b ; ^d ; Yedileth Contreras^a ; J. Garcí ; a^b ; ^c ; E. Ló ; pez^a ; M. Alurralde^b ; C. Algora^a ; E. Godfrin^b ; I. Rey-Stolle^a ; J. Plá ; ^b ; ^c

关键词：Multijunction solar cell ; Irradiation ; Protons ; TCAD ; Defects

刊名：Solar Energy Materials and Solar Cells

出版年：2017

4.Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

作者：Tim Baldauf^a ; ^{Tim.Baldauf@namlab.com} ; André ; Heinzig^a ; Jens Trommer^b ; Thomas Mikolajick^a ; ^b ; Walter Michael Weber^a ; ^b

关键词：Silicon nanowire ; Reconfigurable logic ; CMOS ; RFET ; SBFET ; Tunneling ; Schottky junction ; Stress ; Strain ; Symmetry ; Deformation potential ; Self-limited oxidation ; Simulation ; TCAD

刊名：Solid-State Electronics

出版年：2017

5.Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

作者：Talib Al-Ameri^a ; ^b ; ^{t.ali.1@research.gla.ac.uk} ; Vihar P. Georgiev^a ; Toufik Sadi^a ; Yijiao Wang^a ; ^c ; Fikru Adamu-Lema^a ; Xingsheng Wang^d ; Salvatore M. Amoroso^d ; Ewan Towie^d ; Andrew Brown^d ; Asen Asenov^a ; ^d

关键词：CMOS ; Electrostatics ; Nanowire transistors ; Performance ; Quantum effects ; TCAD

刊名：Solid-State Electronics

出版年：2017

6.Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor

作者：Madhulika Verma ^{madhulikaverma@iiitdmj.ac.in} ; Dheeraj Sharma ^{dheeraj@iiitdmj.ac.in} ; Sunil Pandey ; ^{sunilpandey@iiitdmj.ac.in} ; Kaushal Nigam ^{kaushal.nigam@iiitdmj.ac.in} ; P.N. Kondekar ^{pnkondekar@iiitdmj.ac.in}

关键词：Band to band tunneling (BTBT) ; Dielectrically modulated TFETs ; Biosensors ; Technology computer aided design (TCAD) ; Sensitivity

刊名：Superlattices and Microstructures

出版年：2017

7.Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

作者：Kanchan Cecil ; ^{c.kanchan@iiitdmj.ac.in} ; Jawar Singh ^{jawar@iiitdmj.ac.in}

关键词：Tunnel field effect transistor (TFETs) ; Band-to-band tunneling (BTBT) ; Charge plasma ; Band gap engineering ; Germanium (Ge) ; Analog FOMs ; RF FOMs ; TCAD

刊名：Superlattices and Microstructures

出版年：2017

8.Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistors

作者：Balraj Singh ^{balraj.bits@gmail.com} ; Deepti Gola ^{er.deeptigola@gmail.com} ; Kunal Singh ^{kunals.rs.ece@itbhu.ac.in} ; Ekta Goel ^{ekta.goel.ece11@iitbhu.ac.in} ; Sanjay Kumar ^{sanjay.kumar.ece11@iitbhu.ac.in} ; Satyabrata Jit ; ^{sjit.ece@iitbhu.ac.in}

关键词：Junctionless FET ; Double-gate ; Gaussian-like doping ; Short channel effects ; Subthreshold current ; Subthreshold swing

刊名：Materials Science in Semiconductor Processing

出版年：2017

9.Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs

作者：Yuan Lei^a ; Song Qingwen^a ; ^b ; ^{qwsong@xidian.edu.cn} ; Tang Xiaoyan^a ; Zhang Yimeng^a ; Yang Shuai^a ; Zhang Yimen^a ; Guo Lixin^c ; Xiao Li^d ; Wang Liangyong^d ; Zhang Yuming^a

关键词：Bipolar junction transistor ; Lifetime ; Switching characteristic ; Charge storage

刊名：Superlattices and Microstructures

出版年：2017

10.Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection

作者：C. Jungemann^a ; ^{cj@ithe.rwth-aachen.de} ; T. Linn^a ; K. Bittner^b ; H.-G. Brachtendorf^b

关键词：Drift-diffusion model ; Resistive mixer ; Plasma waves ; THz detectors

刊名：Solid-State Electronics

出版年：2017

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