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内部出版物
CNKI学位论文(14)
知网期刊论文(3)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:小于0.01 秒
在所有数据库中总计命中:
17
条
1.
Recovery pattern of non-protein respiratory quotient and non-esterified fatty acids after liver resection
作者:
Kohei
Sugihara
;
B.A.
a
;
Hisami Yamanaka-Okumura
;
Ph.D.
a
;
yamanaka@nutr.med.tokushima-u.ac.jp" class="auth_mail
;
Arisa Teramoto
;
M.S.
a
;
Eri Urano
;
M.S.
a
;
Takafumi Katayama
;
Ph.D.
b
;
Hiroki Mori
;
M.D.
;
Ph.D.
c
;
Tohru Utsunomiya
;
M.D.
;
Ph.D.
c
;
Mitsuo Shimada
;
M.D.
;
Ph.D.
c
;
Eiji Takeda
;
M.D.
;
Ph.D.
a
关键词:
Non-protein respiratory quotient
;
Hepatectomy
;
Non-esterified fatty acids
;
Late evening snack
;
Nutritional management
刊名:Nutrition
出版年:April, 2014
2.
A case of coronary artery disease with antiphospholipid syndrome that showed repeated stent thrombosis
作者:
Takahiro Mito
;
MD
;
Shin-ichiro Miura
;
MD
;
FJCC
;
miuras@cis.fukuoka-u.ac.jp
;
Kohei
Takada
;
MD
;
Rie Koyoshi
;
MD
;
Joji Morii
;
MD
;
Makoto
Sugihara
;
MD
;
Ken Mori
;
MD
;
Atsushi Iwata
;
MD
;
Hideto Sako
;
MD
;
Hiroaki Nishikawa
;
MD
;
Akira Kawamura
;
MD
;
Keijiro Saku
;
MD
;
FJCC
关键词:
Antiphospholipid syndrome
;
Percutaneous coronary intervention
;
Stent thrombosis
;
Acute coronary syndrome
;
In-stent restenosis
刊名:Journal of Cardiology Cases
出版年:2011
3.
Low thermal budget selective epitaxial growth for formation of elevated source/drain MOS transistors
作者:
Nakahata
;
Takumi
;
Sugihara
;
Kohei
;
Abe
;
Yuji
;
Ozeki
;
Tatsuo
关键词:
68.35.&minus
p ;
68.35.Ct
;
68.55.&minus
a ;
81.15.Gh
;
A1. Crystal morphology
;
A3. Chemical vapor deposition process
;
A3. Selective epitaxy
;
B2. Semiconducting silicon
;
B3. Field effect transistor
刊名:Journal of Crystal Growth
出版年:2004
4.
Optimization of process conditions of selective epitaxial growth for elevated source/drain CMOS transistor
作者:
Nakahata
;
Takumi
;
Sugihara
;
Kohei
;
Maruno
;
Shigemitsu
;
Abe
;
Yuji
;
Ozeki
;
Tatsuo
关键词:
61.66.&minus
f ;
68.35.Dv
;
68.55.&minus
a ;
81.15.Gh
;
A1. Crystal morphology
;
A3. Chemical vapor deposition process
;
A3. Selective epitaxy
;
B2. Semiconducting silicon
;
B3. Field effect transistor
刊名:Journal of Crystal Growth
出版年:2002
5.
Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition
作者:
Nakahata
;
Takumi
;
Yamamoto
;
Kazuma
;
Maruno
;
Shigemitsu
;
Inagaki
;
Toru
;
Sugihara
;
Kohei
;
Abe
;
Yuji
;
et. al.
关键词:
61.66.&minus
f ;
68.35.Md
;
68.55.&minus
a ;
81.15.Gh
;
A1.Crystal morphology
;
A1.Surface processes
;
A3.Chemical vapor deposition processes
;
A3.Selective epitaxy
;
B2.Semiconducting silicon
;
B3.Field effect transistors
刊名:Journal of Crystal Growth
出版年:2001
6.
Improvement of alignment tolerance against contact hole etching by growing of underlying silicon-selective epitaxial layer
作者:
Nakahata
;
Takumi
;
Sugihara
;
Kohei
;
Furukawa
;
Taisuke
;
Nishioka
;
Yasutaka
;
Maruno
;
Shigemitsu
;
et. al.
关键词:
ULSI
;
Isolation
;
Contact
;
Alignment margin
;
Selective epitaxial growth
刊名:Microelectronic Engineering
出版年:2001
7.
Epitaxial Si
1−
x
Ge
x
grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition
作者:
Nakahata
;
Takumi
;
Sugihara
;
Kohei
;
Furukawa
;
Taisuke
;
Yamakawa
;
Satoshi
;
Maruno
;
Shigemitsu
;
et. al.
关键词:
Si
;
SiGe
;
Selective epitaxy
;
UHV-CVD
;
Contact hole
;
LSI
刊名:Materials Science and Engineering: B
出版年:2000
1
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作者(7)
按出版年细分(7)
2027年及以后(1)
2011年(1)
2004年(1)
2002年(1)
2001年(2)
2000年(1)
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