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CNKI学位论文(4)
知网期刊论文(14)
在“
SpringerLink电子期刊
”中,
命中:
3
条,耗时:小于0.01 秒
在所有数据库中总计命中:
18
条
1.
Gate and drain SEU sensitivity of sub-20-nm
FinFET
- and
Junctionless
FinFET-based 6T-SRAM circuits by 3D TCAD simulation
作者:
S. Nilamani
;
V. N. Ramakrishnan
关键词:
Trigate
;
FinFET
;
Junctionless
FinFET
;
6T
;
SRAM
;
Heavy ion
;
SEU radiation
刊名:Journal of Computational Electronics
出版年:2017
2.
Simulation study on deep nanoscale short channel
junctionless
SOI
FinFET
s with triple-gate or double-gate structures
作者:
Xi Liu (1)
Meile Wu (1)
Xiaoshi Jin (1)
Rongyan Chuai (1)
Jong-Ho Lee (2)
关键词:
Junctionless
(JL)
;
FinFET
s
;
Triple
;
gate (TG)
;
Double
;
gate (DG)
;
Device simulation
刊名:Journal of Computational Electronics
出版年:2014
3.
A single poly-Si gate-all-around
junctionless
fin field-effect transistor for use in one-time programming nonvolatile memory
作者:
Mu-Shih Yeh (8)
Yung-Chun Wu (8)
Kuan-Cheng Liu (8)
Ming-Hsien Chung (8)
Yi-Ruei Jhan (8)
Min-Feng Hung (8)
Lun-Chun Chen (8)
8. Department of Engineering and System Science
;
National Tsing Hua University
;
101
;
Section 2
;
Kuang Fu Road
;
Hsinchu
;
30013
;
Taiwan
关键词:
Single poly
;
Si
;
Gate
;
all
;
around
;
Junctionless
;
Fin field
;
effect transistor
;
One
;
time programming
;
Nonvolatile memory
;
Three
;
dimensional
;
Flash memory
刊名:Nanoscale Research Letters
出版年:2014
1
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