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ACS电子期刊(8)
在“
ACS电子期刊
”中,
命中:
8
条,耗时:小于0.01 秒
在所有数据库中总计命中:
17
条
1.
Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates
作者:
Liangliang Zhang
;
Yuzheng Guo
;
Vinayak Vishwanath Hassan
;
Kechao
Tang
;
Majeed A. Foad
;
Joseph C. Woicik
;
Piero Pianetta
;
John Robertson
;
Paul C. McIntyre
刊名:ACS Applied Materials & Interfaces
出版年:2016
2.
Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface
作者:
Roy Winter
;
Pini Shekhter
;
Kechao
Tang
;
Luca Floreano
;
Alberto Verdini
;
Paul C. McIntyre
;
Moshe Eizenberg
刊名:ACS Applied Materials & Interfaces
出版年:2016
3.
Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes
作者:
Andrew G. Scheuermann
;
John P. Lawrence
;
Andrew C. Meng
;
Kechao
Tang
;
Olivia L. Hendricks
;
Christopher E. D. Chidsey
;
Paul C. McIntyre
刊名:ACS Applied Materials & Interfaces
出版年:2016
4.
From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires
作者:
Heidi Potts
;
Martin Friedl
;
Francesca Amaduzzi
;
Kechao
Tang
;
G?zde Tütüncüoglu
;
Federico Matteini
;
Esther Alarcon Lladó
;
Paul C. McIntyre
;
Anna Fontcuberta i Morral
刊名:Nano Letters
出版年:2016
5.
Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks
作者:
Kechao
Tang
;
Andrew C. Meng
;
Ravi Droopad
;
Paul C. McIntyre
刊名:ACS Applied Materials & Interfaces
出版年:2016
6.
Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures
作者:
Liangliang Zhang
;
Huanglong Li
;
Yuzheng Guo
;
Kechao
Tang
;
Joseph Woicik
;
John Robertson
;
Paul C. McIntyre
刊名:ACS Applied Materials & Interfaces
出版年:2015
7.
Tunable Bandgap in Silicene and Germanene
作者:
Zeyuan Ni
;
Qihang Liu
;
Kechao
Tang
;
Jiaxin Zheng
;
Jing Zhou
;
Rui Qin
;
Zhengxiang Gao
;
Dapeng Yu
;
Jing Lu
刊名:Nano Letters
出版年:2012
8.
Electric-Field-Induced Energy Gap in Few-Layer Graphene
作者:
Kechao
Tang
;
Rui Qin
;
Jing Zhou
;
Heruge Qu
;
Jiaxin Zheng
;
Ruixiang Fei
;
Hong Li
;
Qiye Zheng
;
Zhengxiang Gao
;
Jing Lu
刊名:Journal of Physical Chemistry C
出版年:2011
1
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