设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
Elsevier电子期刊(5)
在“
Elsevier电子期刊
”中,
命中:
5
条,耗时:0.1419303 秒
在所有数据库中总计命中:
5
条
1.
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al
2
O
3
/Si gate stack by annealing temperature
作者:
J. Gao
a
;
b
;
G. He
a
;
ganghe
01@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
M. Liu
c
;
mliu@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
J.G. Lv
d
;
jglv@hftc.edu.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
Z.Q. Sun
a
;
C.Y. Zheng
a
;
P. Jin
a
;
D.Q. Xiao
a
;
X.S. Chen
e
关键词:
High-k dielectric
;
Interface thermal stability
;
Atomic-layer-deposition
;
Band alignment
;
Electrical properties
;
Leakage current mechanism
刊名:Journal of Alloys and Compounds
出版年:2017
2.
Modification of optical and electrical properties of sol-gel-derived TiO
2
-doped ZrO
2
gate dielectrics by annealing temperature
作者:
D.Q. Xiao
a
;
G. He
a
;
ganghe
01@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
M. Liu
b
;
mliu@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
J. Gao
a
;
c
;
P. Jin
a
;
S.S. Jiang
a
;
W.D. Li
a
;
M. Zhang
a
;
Y.M. Liu
a
;
J.G. Lv
d
;
jglv@hftc.edu.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
Z.Q. Sun
a
关键词:
High-k gate dielectrics
;
Optical constant
;
Electrical properties
;
Ti incorporation
;
Sol-gel
;
Conduction mechanisms
刊名:Journal of Alloys and Compounds
出版年:2016
3.
Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review
作者:
Cong Ye
1
;
Jiaji Wu
1
;
Gang He
2
;
ganghe
01@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
Jieqiong Zhang
3
;
Tengfei Deng
1
;
Pin He
1
;
Hao Wang
1
;
nanoguy@126.com"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
关键词:
RRAM (resistive random access memory)
;
Transition metal oxide
;
Conductive filament
;
Resistive switching
刊名:Journal of Materials Science & Technology
出版年:2016
4.
Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO
2
/Si gate stack
作者:
J. Gao
a
;
b
;
G. He
a
;
ganghe
01@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
J.W. Zhang
a
;
B. Deng
a
;
Y.M. Liu
a
关键词:
High-k gate dielectric
;
Interface thermal stability
;
Sputtering
;
Electrical properties
;
Leakage current mechanism
刊名:Journal of Alloys and Compounds
出版年:2015
5.
Effects of boron incorporation on the structural, optical and electrical properties of sol-gel-derived ZrO
2
gate dielectrics
作者:
D.Q. Xiao
;
G. He
;
ganghe
01@
issp
.ac.cn"
class
="auth_
mail
"
title
="E-
mail
the
corresponding
author
;
P. Jin
;
J. Gao
;
J.W. Zhang
;
X.F. Chen
;
C.Y. Zheng
;
M. Zhang
;
Z.Q. Sun
关键词:
High-k gate dielectrics
;
Optical constant
;
Electrical properties
;
Boron incorporation
;
Sol&ndash
;
gel
;
Conduction mechanisms
刊名:Journal of Alloys and Compounds
出版年:2015
1
按检索点细分(5)
作者(5)
按出版年细分(5)
2017年(1)
2016年(2)
2015年(2)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.