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Elsevier电子期刊(8)
在“
Elsevier电子期刊
”中,
命中:
8
条,耗时:小于0.01 秒
在所有数据库中总计命中:
8
条
1.
Underlapped FinFET on insulator: Quasi3D analytical model
作者:
Vandana Kumari
a
;
vandanakumari511@gmail.com
;
K. Sharmetha
b
;
sharmetha208@gmail.com
;
Manoj
Saxena
c
;
saxena
_
manoj
77@yahoo.co.in
;
Mridula Gupta
d
;
mridula@south.du.ac.in
关键词:
FinFET
;
ATLAS
;
Underlap
;
3D modeling
刊名:Solid-State Electronics
出版年:2017
2.
Nanoscale T-shaped Double Gate DG MOSFET: Numerical Investigation for Analog/RF and Digital Performance
作者:
Vandana Kumari
a
;
b
;
vandanakumari511@gmail.com" class="auth_mail" title="E-mail the
corresponding
author
;
Aravindan Ilango
c
;
aravindanilango93@gmail.com" class="auth_mail" title="E-mail the
corresponding
author
;
Manoj
Saxena
d
;
saxena
_
manoj
77@yahoo.co.in" class="auth_mail" title="E-mail the
corresponding
author
;
Mridula Gupta
a
;
mridula@south.du.ac.in" class="auth_mail" title="E-mail the
corresponding
author
关键词:
Modeling
;
T-shaped gate
;
ATLAS
刊名:Superlattices and Microstructures
出版年:2016
3.
Investigation of dielectric pocket induced variations in tunnel field effect transistor
作者:
Upasana
a
;
upasanakardam@gmail.com" class="auth_mail" title="E-mail the
corresponding
author
;
Rakhi Narang
b
;
rakhinarang@gmail.com" class="auth_mail" title="E-mail the
corresponding
author
;
Manoj
Saxena
c
;
saxena
_
manoj
77@yahoo.co.in" class="auth_mail" title="E-mail the
corresponding
author
;
Mridula Gupta
a
;
mridula@south.du.ac.in" class="auth_mail" title="E-mail the
corresponding
author
关键词:
Ambipolar conduction
;
Dielectric pocket
;
High-k dielectric pocket
;
Low-k dielectric pocket
;
Tunnel FET
刊名:Superlattices and Microstructures
出版年:2016
4.
Analysis of gate underlap channel double gate MOS transistor for electrical detection of bio-molecules
作者:
Ajay
a
;
ajay.does@gmail.com" class="auth_mail" title="E-mail the
corresponding
author
Author Vitae
;
Rakhi Narang
b
;
rakhinarang@gmail.com" class="auth_mail" title="E-mail the
corresponding
author
Author Vitae
;
Manoj
Saxena
c
;
saxena
_
manoj
77@yahoo.co.in" class="auth_mail" title="E-mail the
corresponding
author
Author Vitae
;
Mridula Gupta
a
;
mridula@south.du.ac.in" class="auth_mail" title="E-mail the
corresponding
author
Author Vitae
关键词:
Analytical modeling
;
Conformal mapping
;
Dielectric-modulation field-effect transistor (DMFET)
;
Gate undrelap channel
;
Fixed charge carrier
刊名:Superlattices and Microstructures
出版年:2015
5.
Drain current model for a gate all around (GAA) p-n-p-n tunnel FET
作者:
Rakhi Narang
a
;
rakhinarang@gmail.com
;
Manoj
Saxena
b
;
saxena
_
manoj
77@yahoo.co.in
;
R.S. Gupta
c
;
rsgupta1943@gmail.com
;
Mridula Gupta
a
;
mridula@south.du.ac.in
;
mridula_du@yahoo.com
关键词:
Barrier width
;
Device simulation
;
Gate all around (GAA)
;
Pocket doped
;
p&ndash
;
n&ndash
;
p&ndash
n ;
Tunnel field effect transistor (TFET)
刊名:Microelectronics Journal
出版年:2013
6.
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter
作者:
Rajni Gautam
a
;
1
;
rajni7986@gmail.com
;
Manoj
Saxena
b
;
saxena
_
manoj
77@yahoo.co.in
;
R.S. Gupta
c
;
rsgupta1943@gmail.com
;
Mridula Gupta
a
;
mridula@south.du.ac.in
刊名:Microelectronics Reliability
出版年:2013
7.
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis
作者:
Rajni Gautam
a
;
rajni7986@gmail.com
;
Manoj
Saxena
b
;
saxena
_
manoj
77@yahoo.co.in
;
R.S. Gupta
c
;
rsgu@bol.net.in
;
Mridula Gupta
a
;
mridula@south.du.ac.in
刊名:Microelectronics Reliability
出版年:2012
8.
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range
作者:
Vandana Kumari
a
;
vandanakumari511@gmail.com
;
Manoj
Saxena
b
;
saxena
_
manoj
77@yahoo.co.in
;
R.S. Gupta
c
;
rsgu@bol.net.in
;
Mridula Gupta
a
;
mridula@south.du.ac.in
刊名:Microelectronics Reliability
出版年:2012
1
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