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Elsevier电子期刊(399)

在“Elsevier电子期刊”中，命中：399条，耗时：0.0440141 秒

在所有数据库中总计命中：399条

1.Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

作者：Ningbo Jia^a ; Yadong Xu^a ; ^b ; ^{xyd220@nwpu.edu.cn} ; Rongrong Guo^a ; Yaxu Gu^a ; Xu Fu^a ; Yuhan Wang^a ; Wanqi Jie^a

关键词：A1. Line defects ; A1. Substrates ; A2. Bridgman technique ; B1. Cadmium compounds ; B2. Semiconducting ternary compounds

刊名：Journal of Crystal Growth

出版年：2017

2.Colony structure in Ce-doped Al₂O₃/YAG eutectic systems grown by vertical Bridgman technique

作者：Seiya Yamada^a ; Masafumi Yoshimura^a ; ^b ; Shin-ichi Sakata^b ; Toshinori Taishi^a ; Keigo Hoshikawa^a ; ^{khoshi1@shinshu-u.ac.jp" class="auth_mail" title="E-mail the corresponding author}

关键词：A1.Eutectics ; A1.Directional solidification ; A2.Bridgman technique ; B1.Oxides ; B1.Sapphire ; B1.Yttrium compounds

刊名：Journal of Crystal Growth

出版年：2016

3.Growth and characterization of CdMnTe by the vertical Bridgman technique

作者：U.N. Roy^a ; ^{uroy@bnl.gov" class="auth_mail" title="E-mail the corresponding author} ; G.S. Camarda^a ; Y. Cui^a ; G. Gu^a ; R. Gul^a ; ^b ; A. Hossain^a ; G. Yang^a ; S.U. Egarievwe^a ; ^b ; R.B. James^a

关键词：A1. Characterization ; A1. Extended defects ; A1. Sub-grain boundary network ; A2. Bridgman ; B2. CdMnTe ; B2. Semiconducting II&ndash ; VI materials

刊名：Journal of Crystal Growth

出版年：2016

4.Exploring growth conditions and Eu²⁺ concentration effects for KSr₂I₅:Eu scintillator crystals

作者：L. Stand^a ; ^b ; ^{lstand@utk.edu" class="auth_mail" title="E-mail the corresponding author} ; M. Zhuravleva^a ; ^b ; G. Camarda^c ; A. Lindsey^a ; ^b ; J. Johnson^a ; ^b ; C. Hobbs^a ; ^b ; C.L. Melcher^a ; ^b

关键词：A2. Bridgman technique ; A2. Single crystal growth ; B1. Halides ; B1. Potassium compounds ; B3. Scintillator ; Micro-resolution X-ray mapping

刊名：Journal of Crystal Growth

出版年：2016

5.X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects

作者：L. Abbene^a ; ^{leonardo.abbene@unipa.it" class="auth_mail" title="E-mail the corresponding author} ; G. Gerardi^a ; A.A. Turturici^a ; G. Raso^a ; G. Benassi^b ; M. Bettelli^c ; N. Zambelli^b ; A. Zappettini^c ; F. Principato^a

关键词：CdZnTe detectors ; Boron oxide encapsulated vertical Bridgman ; X-ray and gamma ray detectors ; High flux ; Digital pulse shape analysis ; Energy-resolved photon counting detectors

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：2016

6.Growth of β-Ga₂O₃ single crystals using vertical Bridgman method in ambient air

作者：K. Hoshikawa^a ; ^{khoshi1@shinshu-u.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; E. Ohba^b ; T. Kobayashi^b ; J. Yanagisawa^b ; C. Miyagawa^b ; Y. Nakamura^b

关键词：A2. Bridgman technique ; A2. Growth from melt ; A2. Single crystal growth ; B1. Oxides ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2016

7.Synthesis, growth and physical properties of silver gallium sulfide single crystals

作者：N. Karunagaran ; ^{karthickkaruna@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; P. Ramasamy

关键词：A1 X-ray diffraction ; A2 Single crystal growth ; A2 Growth from melt ; A2 Bridgman technique ; B2 Nonlinear optic material ; B3 Infrared devices

刊名：Materials Science in Semiconductor Processing

出版年：2016

8.Modeling effects of solute concentration in Bridgman growth of cadmium zinc telluride

作者：Carmen Stelian^a ; ^b ; ^{carmen.stelian@simap.grenoble-inp.fr" class="auth_mail" title="E-mail the corresponding author} ; Thierry Duffar^a

关键词：A1. Computer simulation ; A2. Bridgman technique ; B1. Cadmium compounds

刊名：Journal of Crystal Growth

出版年：2016

9.Numerical simulation of stresses and dislocations in quasi-mono silicon

作者：K. Dadzis^a ; ^{kaspars.dadzis@solarworld.com" class="auth_mail" title="E-mail the corresponding author} ; H. Behnken^b ; T. Bä ; hr^b ; D. Oriwol^a ; L. Sylla^a ; T. Richter^a

关键词：A1. Computer simulation ; A1. Line defects ; A1. Stresses ; A2. Bridgman technique ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：2016

10.Dynamic stability of detached solidification

作者：K. Mazuruk^a ; M.P. Volz^b ; ^{Martin.Volz@nasa.gov" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Solidification ; A1. Stability analysis ; A2. Bridgman technique ; A2. Detached growth ; A2. Microgravity conditions ; A2. Growth from melt

刊名：Journal of Crystal Growth

出版年：2016

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