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Elsevier电子期刊(208)
在“
Elsevier电子期刊
”中,
命中:
208
条,耗时:0.0189575 秒
在所有数据库中总计命中:
208
条
1.
Thick nonpolar m-plane and semipolar GaN on an ammonothermal seed by tri-halide
vapor
-
phase
epitaxy
using GaCl
3
作者:
Kenji Iso
;
isokenji@cc.tuat.ac.jp
;
Karen Matsuda
;
Nao Takekawa
;
Kazuhiro Hikida
;
Naoto Hayashida
;
Hisashi Murakami
;
Akinori Koukitu
关键词:
A1. Substrates
;
A3
.
Hydride
vapor
-
phase
epitaxy
;
B1. Nitrides
;
B2. Semiconducting III-V materials
刊名:Journal of Crystal Growth
出版年:2017
2.
Hydride
CVD Hetero-
epitaxy
of B
12
P
2
on 4H-SiC
作者:
C.D. Frye
a
;
b
;
C.K. Saw
a
;
Balabalaji Padavala
b
;
R.J. Nikolić
a
;
J.H. Edgar
b
;
关键词:
A3
. Chemical
vapor
deposition processes
;
A3
.
Hydride
vapor
phase
epitaxy
;
B1. Borides
;
B2. Semiconducting boride compounds
刊名:Journal of Crystal Growth
出版年:2017
3.
Semipolar AlN and GaN on Si(100): HVPE technology and layer properties
作者:
V. Bessolov
a
;
A. Kalmykov
a
;
E. Konenkova
a
;
lena@triat.ioffe.rssi.ru
;
S. Kukushkin
b
;
A. Myasoedov
a
;
N. Poletaev
a
;
S. Rodin
a
关键词:
B1. Silicon
;
B1. Silicon carbide
;
B2. Semiconducting III&ndash
;
V materials
;
A3
.
Hydride
vapor
phase
epitaxy
刊名:Journal of Crystal Growth
出版年:2017
4.
Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
作者:
Jun Huang
a
;
Mu Tong Niu
a
;
Ji Cai Zhang
a
;
b
;
Wei Wang
a
;
Jian Feng wang
a
;
b
;
c
;
Ke Xu
a
;
b
;
kxu2006@sinano.ac.cn
关键词:
B1. AlN
;
A3
.
Hydride
vapor
phase
epitaxy
;
A1. Dislocation
;
A1. Stress
;
A1. TEM
刊名:Journal of Crystal Growth
出版年:2017
5.
Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide
vapor
phase
epitaxy
作者:
Takahide Hirasaki
a
;
Martin Eriksson
b
;
Quang Tu Thieu
c
;
Fredrik Karlsson
b
;
Hisashi Murakami
a
;
murak@cc.tuat.ac.jp
;
Yoshinao Kumagai
a
;
Bo Monemar
b
;
c
;
Per Olof Holtz
b
;
Akinori Koukitu
a
关键词:
A3
.
Hydride
vapor
phase
epitaxy
;
A3
. Chloride
vapor
phase
epitaxy
;
B1. Nitrides
;
B2. Semiconducting indium compounds
刊名:Journal of Crystal Growth
出版年:2016
6.
Fe-doping in
hydride
vapor
-
phase
epitaxy
for semi-insulating gallium nitride
作者:
E. Richter
;
eberhard.richter@fbh-berlin.de
;
E. Gridneva
;
M. Weyers
;
G. Trä
;
nkle
关键词:
A1. Doping
;
A2. Growth from
vapor
;
A3
.
Hydride
vapor
phase
epitaxy
;
B2. Semiconducting gallium compounds
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
7.
Computational fluid dynamics-aided analysis of a
hydride
vapor
phase
epitaxy
reactor
作者:
Kevin L. Schulte
a
;
kevin.schulte@nrel.gov" class="auth_mail" title="E-mail the corresponding author
;
John Simon
a
;
Abhra Roy
b
;
Robert C. Reedy
a
;
David L. Young
a
;
Thomas F. Kuech
c
;
Aaron J. Ptak
a
关键词:
A1. Computer simulation
;
A1. Fluid flows
;
A3
.
Hydride
vapor
phase
epitaxy
;
B2.Semiconducting III&ndash
;
V materials
;
B3. Solar cells
刊名:Journal of Crystal Growth
出版年:2016
8.
Tri-halide
vapor
phase
epitaxy
of thick GaN using gaseous GaCl
3
precursor
作者:
Hisashi Murakami
a
;
murak@cc.tuat.ac.jp
;
Nao Takekawa
a
;
Anna Shiono
a
;
Quang Tu Thieu
a
;
Rie Togashi
a
;
Yoshinao Kumagai
a
;
Koh Matsumoto
b
;
Akinori Koukitu
a
关键词:
A1. Crystal structure
;
A3
.
Hydride
vapor
phase
epitaxy
;
B1. Nitrides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
9.
TEM study of defect structure of GaN epitaxial films grown on GaN/Al
2
O
3
substrates with buried column pattern
作者:
M.G. Mynbaeva
a
;
mgm@mail.ioffe.ru" class="auth_mail" title="E-mail the corresponding author
;
A.V. Kremleva
a
;
D.A. Kirilenko
a
;
b
;
A.A. Sitnikova
a
;
A.I. Pechnikov
b
;
c
;
K.D. Mynbaev
a
;
b
;
V.I. Nikolaev
a
;
c
;
V.E. Bougrov
b
;
H. Lipsanen
b
;
d
;
A.E. Romanov
a
;
b
关键词:
A1. Defects
;
A3
.
Hydride
vapor
phase
epitaxy
;
A3
. Metalorganic chemical
vapor
deposition
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
10.
Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE
作者:
Kaddour Lekhal
a
;
b
;
c
;
lekhal.kaddour@yahoo.fr" class="auth_mail" title="E-mail the corresponding author
;
Si-Young Bae
a
;
siyoubae@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Ho-Jun Lee
a
;
Tadashi Mitsunari
a
;
Akira Tamura
a
;
Manato Deki
b
;
Yoshio Honda
b
;
Hiroshi Amano
b
;
c
;
d
关键词:
A3
. Selective area growth (SAG)
;
A3
.
Hydride
vapor
phase
epitaxy
(HVPE)
;
B1. Microrods
;
B2. Semiconducting gallium compounds
刊名:Journal of Crystal Growth
出版年:2016
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