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Wiley电子期刊(8)	ProQuest学位论文(2)	GSW全文库(3)	ACS电子期刊(315)
SpringerLink电子期刊(338)	NATURE电子期刊(8)	Elsevier电子期刊(1345)

在“Elsevier电子期刊”中，命中：1,345条，耗时：0.0259872 秒

在所有数据库中总计命中：2,019条

1.Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

作者：Tim Baldauf^a ; ^{Tim.Baldauf@namlab.com} ; André ; Heinzig^a ; Jens Trommer^b ; Thomas Mikolajick^a ; ^b ; Walter Michael Weber^a ; ^b

关键词：Silicon nanowire ; Reconfigurable logic ; CMOS ; RFET ; SBFET ; Tunneling ; Schottky junction ; Stress ; Strain ; Symmetry ; Deformation potential ; Self-limited oxidation ; Simulation ; TCAD

刊名：Solid-State Electronics

出版年：2017

2.The strain effect on the Dirac electrons tunneling through the time-periodic scalar and vector barriers

作者：Weixian Yan ^{wxyansxu@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：Graphene ; Magnetic barriers ; Strain ; Side-band Transmission

刊名：Physica B: Physics of Condensed Matter

出版年：2017

3.Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5 nm DGMOSFET

作者：Hakkee Jung^a ; ^{hkjung@kunsan.ac.kr} ; Sima Dimitrijev^b

关键词：Subthreshold ; Threshold voltage ; DGMOSFET ; Tunneling current ; ΔVon&ndash ; off

刊名：Superlattices and Microstructures

出版年：2017

4.Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

作者：Jaya Madan ^{jayamadan.2012@gmail.com} ; Rishu Chaujar ; ^{rishu.phy@dce.edu}

关键词：Band to band tunneling (BTBT) ; Source pocket ; Gate-drain underlapping (GDU) ; Parasitic capacitance ; Tunneling FET (TFET)

刊名：Superlattices and Microstructures

出版年：2017

5.A solution approach to p-type Cu₂FeSnS₄ thin-films and pn-junction solar cells: Role of electron selective materials on their performance

作者：Soumyo Chatterjee ; Amlan J. Pal ; ^{sspajp@iacs.res.in}

关键词：Cu2FeSnS4 (CFTS) thin-films ; pn-junctions formed through SILAR method ; Solar cell characteristics ; Band-diagram from scanning tunneling spectroscopy ; Junction properties and device resistances

刊名：Solar Energy Materials and Solar Cells

出版年：2017

6.Realization of Silicon nanotube tunneling FET on junctionless structure using single and multiple gate workfunction

作者：R. Ambika^a ; ^{omambika3@gmail.com} ; N. Keerthana^b ; ^{keerthanaec12@gmail.com} ; R. Srinivasan^a ; ^{srinivasanr@ssn.edu.in}

关键词：Tunnel FET ; Junctionless Silicon nanotube ; Single gate workfunction

刊名：Solid-State Electronics

出版年：2017

7.Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

作者：Kanchan Cecil ; ^{c.kanchan@iiitdmj.ac.in} ; Jawar Singh ^{jawar@iiitdmj.ac.in}

关键词：Tunnel field effect transistor (TFETs) ; Band-to-band tunneling (BTBT) ; Charge plasma ; Band gap engineering ; Germanium (Ge) ; Analog FOMs ; RF FOMs ; TCAD

刊名：Superlattices and Microstructures

出版年：2017

8.Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

作者：Nguyen Dang Chien^a ; ^{chiennd@dlu.edu.vn} ; Chun-Hsing Shih^b

关键词：Source doping effects ; EOT scaling ; Band-to-band tunneling ; Tunnel field-effect transistor ; Low-bandgap TFET

刊名：Superlattices and Microstructures

出版年：2017

9.Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor

作者：Madhulika Verma ^{madhulikaverma@iiitdmj.ac.in} ; Dheeraj Sharma ^{dheeraj@iiitdmj.ac.in} ; Sunil Pandey ; ^{sunilpandey@iiitdmj.ac.in} ; Kaushal Nigam ^{kaushal.nigam@iiitdmj.ac.in} ; P.N. Kondekar ^{pnkondekar@iiitdmj.ac.in}

关键词：Band to band tunneling (BTBT) ; Dielectrically modulated TFETs ; Biosensors ; Technology computer aided design (TCAD) ; Sensitivity

刊名：Superlattices and Microstructures

出版年：2017

10.Double gate impact ionization MOS transistor: Proposal and investigation

作者：Zhaonian Yang ; ^{yzn@xaut.edu.cn} ; Yue Zhang ; Yuan Yang ; Ningmei Yu

关键词：Band-to-band tunneling (BTBT) ; Double gate ; Impact ionization ; IMOS ; Leakage current

刊名：Superlattices and Microstructures

出版年：2017

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