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SpringerLink电子期刊(9)
GSW全文库(1)
Elsevier电子期刊(33)
在“
Elsevier电子期刊
”中,
命中:
33
条,耗时:0.0649688 秒
在所有数据库中总计命中:
43
条
1.
Structural and electrical characterization of CoNiO monolayer as copper diffusion barrier in integrated circuits
作者:
S. Sharma
a
;
sumitelsd2007@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
M. Kumar
a
;
b
;
kumarmukseh@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
S. Rani
a
;
sumitagarg2007@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
D. Kumar
a
;
d
;
dineshelsd2014@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
C.C. Tripathi
c
;
tripathiuiet@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Langmuir Blodgett technique
;
Monolayer diffusion barrier
;
Biased
thermal
stress
;
XRD
;
C‒V and leakage current characterization
刊名:Materials Science in Semiconductor Processing
出版年:2016
2.
Diffusion barrier characteristics of co monolayer prepared by Langmuir Blodgett technique
作者:
Sumit Sharma
a
;
sumitelsd2007@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Mukesh Kumar
b
;
kumarmukesh@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Sumita Rani
a
;
Dinesh Kumar
a
;
dineshelsd@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Langmuir Blodgett technique
;
Monolayer diffusion barrier
;
Biased
thermal
stress
;
XRD
;
C&ndash
;
V and leakage current characterization
刊名:Applied Surface Science
出版年:2016
3.
Role of nano-precipitation on the microstructure and shape memory characteristics of a new Ni
50.3
Ti
34.7
Zr
15
shape memory alloy
作者:
A. Evirgen
a
;
I. Karaman
a
;
ikaraman@tamu.edu" class="auth_mail" title="E-mail the corresponding author
;
J. Pons
b
;
R. Santamarta
b
;
R.D. Noebe
c
关键词:
NiTiZr
;
Martensitic transformation
;
Precipitation
;
Microstructure
;
Shape memory alloys
刊名:Materials Science & Engineering A
出版年:2016
4.
Failure mechanism of copper through-silicon vias under
biased
thermal
stress
作者:
Seung-Ho Seo
;
Joo-Sun Hwang
;
Jun-Mo Yang
;
Wook-Jung Hwang
;
Jun-Yeob Song
;
Won-Jun Lee
关键词:
Through-silicon vias
;
Failure mechanism
;
Copper drift
;
Biased
thermal
stress
;
Thermo-mechanical
stress
刊名:Thin Solid Films
出版年:2013
5.
Effects of drain-bias and ambient on hump formation in the transfer curves of positively gate-
biased
MgZnO thin film transistors
作者:
Yi-Shiuan Tsai
a
;
Chih-Hung Li
a
;
I-Chung Chiu
b
;
c
;
Huai-An Chin
b
;
c
;
I-Chun Cheng
b
;
c
;
ichuncheng@cc.ee.ntu.edu.tw
;
Jian Z. Chen
a
;
jchen@ntu.edu.tw
关键词:
Bias temperature stability
;
Oxide TFT
;
MgZnO
;
ZnO
;
Thermal
stability
;
Drain bias
;
Ambient effect
刊名:Thin Solid Films
出版年:2013
6.
Thermodynamic constitutive model for load-
biased
thermal
cycling test of shape memory alloy
作者:
Sung Young
;
Tae-Hyun Nam
关键词:
D. Mechanical properties
;
D. Phase transformations
刊名:Materials Research Bulletin
出版年:2013
7.
Functional fatigue of shape memory wires under constant-
stress
and constant-strain loading conditions
作者:
G. Scirè
;
Mammano
a
;
E. Dragoni
a
关键词:
SMA wires
;
functional fatigue
;
constant-
stress
loading
;
constant-strain loading
刊名:Procedia Engineering
出版年:2011
8.
Estimating the sex ratio of green sea turtles (Chelonia mydas) in Taiwan by the nest temperature and histological methods
作者:
Rowena King
a
;
dabelia@hotmail.com
;
Wan-Hwa Cheng
b
;
lavinia7479@gmail.com
;
Cheng-Tsung Tseng
c
;
t8300377@ms43.hinet.net
;
Hochang Chen
c
;
mydas.c@gmail.com
;
I-Jiunn Cheng
c
;
b0107@mail.ntou.edu.tw
关键词:
Green sea turtle
;
Hatchling sex ratio
;
Histological method
;
Nest temperature
;
Nesting islands
刊名:Journal of Experimental Marine Biology and Ecology
出版年:2013
9.
Thermal
cycling and iso
thermal
deformation response of polycrystalline NiTi: Simulations vs. experiment
作者:
Sivom Manchiraju
a
;
Darrell Gaydosh
b
;
Othmane Benafan
c
;
Ronald Noebe
b
;
Raj Vaidyanathan
c
;
Peter M. Anderson
a
;
anderson.1@osu.edu"" rel=""nofollow
关键词:
Shape memory alloys
;
Thermal
cycling
;
Finite element
刊名:Acta Materialia
出版年:2011
10.
Repeating of positive and negative high electric field
stress
and corresponding
thermal
post-
stress
annealing of the n-channel power VDMOSFETs
作者:
Sanja M. Aleksić
;
Aleks
;
ar B. Jakš
;
ić
;
Momč
;
ilo M. Pejović
关键词:
Fowler-Nordheim injection
;
High electric field
stress
;
Oxide trapped charge
;
Interface traps
;
Switching traps
;
MOS transistors
刊名:Solid-State Electronics
出版年:2008
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