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内部出版物
SpringerLink电子期刊(4)
Elsevier电子期刊(19)
在“
Elsevier电子期刊
”中,
命中:
19
条,耗时:0.0279881 秒
在所有数据库中总计命中:
23
条
1.
Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si¨CSb¨CTe films for phase-change memory
作者:
Xilin
;
Zhou
a
;
;
b
;
Liangcai
;
Wu
a
;
;
wuliangcai@mail.sim.ac.cn
;
Zhitang
;
Song
a
;
Feng
;
Rao
a
;
Kun
;
Ren
a
;
;
b
;
Chen
g
;
Peng
a
;
Bo
;
Liu
a
;
Dongning
;
Yao
a
;
Songlin
;
Feng
a
;
Bomy
;
Chen
c
关键词:
Si&ndash
;
Sb&ndash
;
Te
;
Nitrogen doping
;
Data retention
;
Phase-change random access memory
刊名:Thin Solid Films
出版年:2011
2.
Comparison of the crystallization of Ge–Sb–Te and Si–Sb–Te in a constant-temperature annealing process
作者:
Ting Zhang
;
Yan
Chen
g
;
Zhitang Song
;
Bo Liu
;
Songlin Feng
;
Xiaodong Han
;
Ze Zhang
;
Bomy
Chen
关键词:
Phase-change material
;
Phase-change memory
;
GeSbTe
;
SiSbTe
刊名:Scripta Materialia
出版年:2008
3.
Reactive-ion etching of Sn-doped Ge
2
Sb
2
Te
5
in CHF
3
/O
2
plasma for non-volatile phase-change memory device
作者:
Chen
g Xu
;
Bo Liu
;
Zhitang Song
;
Songlin Feng
;
Bomy
Chen
关键词:
Sn-doped germanium antimony telluride
;
Reactive-ion etching
;
Selectivity
;
Phase change material
;
scanning electron microscopy
;
Trifluoromethane
;
Oxygen
;
CHF
3
/O
2
刊名:Thin Solid Films
出版年:2008
4.
The microstructure investigation of GeTi thin film used for non-volatile memory
作者:
Jie Shen
;
Bo Liu
;
Zhitang Song
;
Chen
g Xu
;
Shuang Liang
;
Songlin Feng
;
Bomy
Chen
关键词:
GeTi
;
Magnetron sputtering
;
Microstructure
;
Reversible resistance switching
刊名:Applied Surface Science
出版年:2008
5.
Phase change memory cell based on Sb
2
Te
3
/TiN/Ge
2
Sb
2
Te
5
sandwich-structure
作者:
Feng Rao
;
Zhitang Song
;
Liangcai Wu
;
Yuefeng Gong
;
Songlin Feng
;
Bomy
Chen
刊名:Solid-State Electronics
出版年:2009
6.
Reactive-ion etching of Ge
2
Sb
2
Te
5
in CF
4
/Ar plasma for non-volatile phase-change memories
作者:
Gaoming Feng
;
Bo Liu
;
Zhitang Song
;
Songlin Feng
;
Bomy
Chen
关键词:
Ge
2
Sb
2
Te
5
(GST)
;
Reactive-ion etching
;
Chalcogenide random access memory
刊名:Microelectronic Engineering
出版年:2008
7.
Au doped Sb
3
Te phase-change material for C-RAM device
作者:
Feng Wang
;
Ting Zhang
;
Chun-liang Liu
;
Zhi-tang Song
;
Liang-cai Wu
;
Bo Liu
;
Song-lin Feng
;
Bomy
Chen
关键词:
Phase-change
;
Crystallization temperature
;
Data retention
;
Au doped Sb
3
Te
刊名:Applied Surface Science
出版年:2008
8.
Characteristics of Si-doped Sb
2
Te
3
thin films for phase-change random access memory
作者:
Yin Zhang
;
Jie Feng
;
Zufa Zhang
;
Bingchu Cai
;
Yinyin Lin
;
Ting’
;
ao Tang
;
Bomy
Chen
关键词:
Sb
2
Te
3
;
Silicon doping
;
Melting temperature
;
Resistivity
;
RESET current
;
PRAM
刊名:Applied Surface Science
出版年:2008
9.
Effects of Ge doping on the properties of Sb
2
Te
3
phase-change thin films
作者:
Jialin Yu
;
Bo Liu
;
Ting Zhang
;
Zhitang Song
;
Songlin Feng
;
Bomy
Chen
关键词:
Ge doping
;
Sb
2
Te
3
;
Structure
;
X-ray photoelectron spectroscopy
;
Resistivity
刊名:Applied Surface Science
出版年:2007
10.
Investigation of phase change Si
2
Sb
2
Te
5
material and its application in chalcogenide random access memory
作者:
Ting Zhang
;
Zhitang Song
;
Bo Liu
;
Songlin Feng
;
Bomy
Chen
关键词:
Phase change
;
Chalcogenide random access memory
;
Si
2
Sb
2
Te
5
刊名:Solid-State Electronics
出版年:2007
1
2
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