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Wiley电子期刊(25)	ProQuest学位论文(3)	Elsevier电子期刊(2214)
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在“Elsevier电子期刊”中，命中：2,214条，耗时：0.0179909 秒

在所有数据库中总计命中：2,954条

1.Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage

作者：Mohammad K. Anvarifard ^{m.anvarifard@guilan.ac.ir}

关键词：Driving current ; Breakdown voltage ; SOI MESFET ; N-type and P-type wells

刊名：Materials Science in Semiconductor Processing

出版年：2017

2.A model based DC analysis of SiPM breakdown voltages

作者：Ferenc Nagy ; ^{nagy.ferenc@atomki.mta.hu} ; Gyula Hegyesi ; Gá ; bor Kalinka ; Jó ; zsef Molnár

关键词：SiPM ; Breakdown voltage ; I-V curve model ; Avalanche turn-on ; Avalanche turn-off

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：2017

3.Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

作者：Meng-tian Bao^a ; Ying Wang^b ; ^{wangying7711@yahoo.com}

关键词：4H-SiC LDMOS ; Patterned buried oxide layer ; Breakdown voltage ; Self-heating effect

刊名：Superlattices and Microstructures

出版年：2017

4.Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

作者：Arash Daghighi ; ^{daghighi-a@eng.sku.ac.ir} ; Hadi Hematian ^{hadi9827@gmail.com}

关键词：Breakdown voltage ; Body resistance ; Body contact ; Lateral BJT ; SOI LDMOSFET

刊名：Solid-State Electronics

出版年：2017

5.Split gate SOI trench LDMOS with low-resistance channel

作者：Ying-Wang^a ; ^{wangying7711@yahoo.com} ; Yi-fan Wang^b ; Yan-juan Liu^a ; Yang-Wang^b

关键词：Trench LDMOSFET ; Split gate ; Specific on-state resistance (Ron ; sp) ; Breakdown voltage (BV) ; Specific gate-charge (Qg ; sp)

刊名：Superlattices and Microstructures

出版年：2017

6.Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

作者：Yan Jing He^a ; ^b ; Hong Liang Lv^a ; ^b ; Xiao Yan Tang^a ; ^b ; ^{xytang@mail.xidian.edu.cn} ; Qing Wen Song^b ; ^c ; Yi Meng Zhang^a ; ^b ; Chao Han^a ; ^b ; Yi Men Zhang^a ; ^b ; Yu Ming Zhang^a ; ^b

关键词：4H-SiC ; VDMOSFET ; Breakdown voltage ; Junction termination

刊名：Solid-State Electronics

出版年：2017

7.Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

作者：Hidekatsu Onose^a ; ^{Hidekatsu.onose.cs@hitachi.com} ; Yutaka Kobayashi^b ; Jin Onuki^c

关键词：SiC ; SIT ; Diode ; Implantation ; Defect ; Lateral spreading

刊名：Solid-State Electronics

出版年：2017

8.A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications

作者：Hujun Jia ; ^{hjjia@mail.xidian.edu.cn} ; Yehui Luo ; Hang Zhang ; Ding Xing ; Peimiao Ma

关键词：4H-SiC MESFET ; Serpentine channel ; Drain saturation current ; Breakdown point shifting

刊名：Superlattices and Microstructures

出版年：2017

9.Correlation and regression between the breakdown voltage and pre-breakdown parameters of vacuum switching elements

作者：Radomir Todorović^a ; ^b ; Dobrila &Scaron ; katarić^b ; Zijad Bajramović^c ; Koviljka Stanković^d ; ^{kstankovic@etf.rs" class="auth_mail" title="E-mail the corresponding author}

关键词：Vacuum switching element ; Switching operation ; Pre-breakdown parameter ; Breakdown voltage ; Correlation ; Regression

刊名：Vacuum

出版年：2016

10.Performance enhancement of AlGaN/GaN nanochannel omega-FinFET

作者：Ki-Sik Im^a ; Jae Hwa Seo^b ; Sindhuri Vodapally^b ; In Man Kang^b ; Jae-Hoon Lee^c ; Sorin Cristoloveanu^d ; Jung-Hee Lee^b ; ^{jlee@ee.knu.ac.kr}

关键词：AlGaN/GaN ; Nanochannel ; Omega-gate ; FinFET ; 2DEG ; Breakdown voltage ; Subthreshold slope

刊名：Solid-State Electronics

出版年：2017

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