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Elsevier电子期刊(58)
在“
Elsevier电子期刊
”中,
命中:
58
条,耗时:小于0.01 秒
在所有数据库中总计命中:
58
条
1.
A new parameter to characterize the charge transport regime in Ni/HfO
2
/Si-n
+
-based RRAMs
作者:
M.A. Villena
a
;
J.B. Roldá
;
n
a
;
jroldan@ugr.es" class="auth_mail" title="E-mail the corresponding author
;
M.B. Gonzá
;
lez
c
;
P. Gonzá
;
lez-Rodelas
b
;
F. Jimé
;
nez-Molinos
a
;
F.
Campabadal
c
;
D. Barrera
b
关键词:
Resistive switching memory
;
RRAM variability
;
Simulation tools
;
Conductive filaments
;
Parameter extraction
刊名:Solid State Electronics
出版年:2016
2.
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
作者:
M. Maestro
a
;
marcos.maestro@uab.es" class="auth_mail" title="E-mail the corresponding author
;
J. Diaz
a
;
A. Crespo-Yepes
a
;
M.B. Gonzalez
b
;
J. Martin-Martinez
a
;
R. Rodriguez
a
;
M. Nafria
a
;
F.
Campabadal
b
;
X. Aymerich
a
关键词:
Resistive switching
;
Random Telegraph Noise
;
Resolution
;
Time constants
;
RRAM
刊名:Solid State Electronics
出版年:2016
3.
Deep electron traps in HfO
2
-based metal-oxide-semiconductor capacitors
作者:
L. Sambuco Salomone
a
;
lucas.iss@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
J. Lipovetzky
a
;
b
;
S.H. Carbonetto
a
;
M.A. Garcí
;
a Inza
a
;
E.G. Redin
a
;
F.
Campabadal
c
;
A. Faigó
;
n
a
;
b
关键词:
Hafnium oxide
;
Atomic layer deposition
;
Electrical characterization
;
Modeling
;
Capacitors
刊名:Thin Solid Films
出版年:2016
4.
Electrical characterization of multiple leakage current paths in HfO
2
/Al
2
O
3
-based nanolaminates
作者:
A. Rodrí
;
guez
a
;
M.B. Gonzalez
b
;
F.
Campabadal
b
;
J. Suñ
;
é
;
a
;
E. Miranda
a
;
enrique.miranda@uab.cat" class="auth_mail" title="E-mail the corresponding author
关键词:
MIS
;
Breakdown
;
Reliability
刊名:Microelectronics Reliability
出版年:2015
5.
2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon
作者:
H. Garcí
;
a
a
;
hecgar@ele.uva.es
;
H. Castá
;
n
a
;
S. Dueñ
;
as
a
;
L. Bailó
;
n
a
;
F.
Campabadal
b
;
J.M. Rafí
;
b
;
M. Zabala
b
;
O. Beldarrain
b
;
H. Ohyama
c
;
1
;
K. Takakura
c
;
I. Tsunoda
c
关键词:
High-k dielectrics
;
Electrical characterization
;
Irradiation
;
Hafnium oxide
;
Aluminum oxide
;
Atomic layer deposition
刊名:Thin Solid Films
出版年:2013
6.
2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al
2
O
3
, HfO
2
and nanolaminated dielectrics
作者:
J.M. Rafí
;
a
;
jm.rafi@csic.es
;
F.
Campabadal
a
;
H. Ohyama
b
;
&dagger
;
;
K. Takakura
b
;
I. Tsunoda
b
;
M. Zabala
a
;
O. Beldarrain
a
;
M.B. Gonzá
;
lez
a
;
H. Garcí
;
a
c
;
H. Castá
;
n
c
;
A. Gó
;
mez
c
;
S. Dueñ
;
as
c
关键词:
Electron irradiation effects
;
High-k dielectrics
;
Al2O3
;
HfO2
;
Nanolaminate
刊名:Solid-State Electronics
出版年:2013
7.
Charge trapping and electrical degradation in atomic layer deposited Al
2
O
3
films
作者:
M.B. Gonzalez
;
mireia.bargallo.gonzalez@csic.es
;
J.M. Rafí
;
O. Beldarrain
;
M. Zabala
;
F.
Campabadal
关键词:
Charge trapping
;
Electrical degradation
;
Al2O3
;
Soft breakdown
;
Progressive breakdown
刊名:Microelectronic Engineering
出版年:2013
8.
Analysis of displacement damage effects on MOS capacitors
作者:
P. Fern谩ndez-Mart铆nez
;
F.R. Palomo
;
S. Hidalgo
;
C. Fleta
;
F.
Campabadal
;
D. Flores
关键词:
Displacement damage defects
;
MOS capacitor
;
Proton irradiation
;
TCAD simulations
;
Displacement damage simulation
刊名:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
出版年:1 December, 2013
9.
Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al
2
O
3
, HfO
2
and nanolaminated dielectrics
作者:
J.M. Raf铆
;
M.B. Gonz谩lez
;
K. Takakura
;
I. Tsunoda
;
M. Yoneoka
;
O. Beldarrain
;
M. Zabala
;
F.
Campabadal
关键词:
Electrical stress
;
Electron irradiation
;
Al2O3
;
HfO2
;
Nanolaminate
;
High-k
刊名:Solid-State Electronics
出版年:November, 2013
10.
Field-effect control of breakdown paths in HfO
2
based MIM structures
作者:
X. Saura
;
X. Lian
;
D. Jim¨¦nez
;
E. Mir
a ;
X. Borris¨¦
;
F.
Campabadal
;
J. Su?¨¦
刊名:Microelectronics Reliability
出版年:2013
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