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Elsevier电子期刊(4)
在“
Elsevier电子期刊
”中,
命中:
4
条,耗时:小于0.01 秒
在所有数据库中总计命中:
4
条
1.
Strained MOSFETs on ordered SiGe dots
作者:
Johann Cervenka
a
;
;
cervenka@iue.tuwien.ac.at
;
Hans Kosina
a
;
Siegfried Selberherr
a
;
Jianjun Zhang
b
;
Nina Hrauda
b
;
Julian Stangl
b
;
Guenther Bauer
b
;
Guglielmo Vastola
c
;
Anna Marzegalli
c
;
Francesco Montalenti
c
;
Leo Miglio
c
关键词:
Strained silicon
;
DOTFET
;
Three-dimensional device simulation
;
Mobility enhancement
;
Technology CAD
刊名:Solid-State Electronics
出版年:2011
2.
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-
DotFET
作者:
J. Moers
;
J. Gerharz
;
G. Rinke
;
G. Mussler
;
St. Trellenkamp
;
D. Grü
;
tzmacher
关键词:
Strained silicon
;
MOSFET
;
E-beam-lithography
;
Overlay
刊名:Thin Solid Films
出版年:2010
3.
Integration of MOSFETs with SiGe dots as stressor material
作者:
L.K. Nanver
a
;
l.k.nanver@tudelft.nl"" rel=""nofollow
;
V. Jovanović
;
a
;
b
;
C. Biasotto
a
;
J. Moers
c
;
D. Grü
;
tzmacher
c
;
J.J. Zhang
d
;
N. Hrauda
d
;
M. Stoffel
e
;
F. Pezzoli
e
;
O.G. Schmidt
e
;
L. Miglio
f
;
H. Kosina
g
;
A. Marzegalli
f
;
G. Vastola
f
;
G. Mussler
c
;
J. Stangl
d
;
G. Bauer
d
;
J. van der Cingel
a
;
E. Bonera
f
关键词:
Silicon–
;
germanium dots
;
Stranski–
;
Krastanow mode
;
Stressor materials
;
MOSFET
;
CMOS
;
Excimer-laser annealing
;
Metal gates
;
Mobility enhancement
刊名:Solid-State Electronics
出版年:2011
4.
Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors
作者:
Schmidt
;
O.G.
;
Denker
;
U.
;
Dashiell
;
M.
;
Jin-Phillipp
;
N.Y.
;
Eberl
;
K.
;
Schreiner
;
R.
;
Grä
;
beldinger
;
H.
;
et. al.
关键词:
Field-effect transistor
;
Self-assembly islands
;
CMOS
;
MOSFET
;
MOFDET alignment
;
Modulation
刊名:Materials Science and Engineering: B
出版年:2002
1
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