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在“
Elsevier电子期刊
”中,
命中:
3,629
条,耗时:0.0869856 秒
在所有数据库中总计命中:
5,515
条
1.
Modelling of high-temperature
dark
current
in multi-quantum well structures from MWIR to VLWIR
作者:
Diogo de Moura Pedroso
a
;
diogo.mourapedroso@gmail.com
;
Gustavo Soares Vieira
a
;
b
;
gvieira@ieav.cta.br
;
Angelo Passaro
a
;
b
;
angelo.passaro@pq.cnpq.br
关键词:
Quantum well
;
Dark
current
;
Probability-flux operator
;
Semiconductor devices
;
Infrared photodetectors
;
Computational modelling
刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2017
2.
CH
3
NH
3
PbI
3
/C
60
heterojunction photodetectors with low
dark
current
and high detectivity
作者:
Yukun Wang
a
;
b
;
Dezhi Yang
a
;
b
;
c
;
Xiaokang Zhou
a
;
b
;
Saad M. Alshehri
d
;
e
;
Tansir Ahamad
d
;
Agafonov Vadim
f
;
Dongge Ma
a
;
b
;
c
;
d
;
msdgma@scut.edu.cn
;
mdg1014@ciac.ac.cn
关键词:
Perovskite photodetectors
;
Low
dark
current
;
High detectivity
刊名:Organic Electronics
出版年:2017
3.
Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes
作者:
Munkhsaikhan Zumuukhorol
a
;
Zagarzusem Khurelbaatar
a
;
b
;
Shim-Hoon Yuk
a
;
Jonghan Won
c
;
Sung-Nam Lee
d
;
Chel-Jong Choi
a
;
cjchoi@jbnu.ac.kr
关键词:
Ge MSM photodetector
;
Dark
current
;
NPDR
;
1/f noise
;
Electric field crowding
;
Current
crowding
刊名:Microelectronics Reliability
出版年:2017
4.
Fabrication, temperature dependent
current
-voltage characteristics and photoresponse properties of Au/α-PbO
2
/p-Si/Al heterojunction photodiode
作者:
M.M. Makhlouf
a
;
b
;
m_makhlof@hotmail.com
;
m.makhlouf@tu.edu.sa
;
M.M. EL-Nahass
c
;
M.H. Zeyada
d
关键词:
PbO2
;
Photodiode
;
Electric mechanisms
;
Photoresponse properties
刊名:Materials Science in Semiconductor Processing
出版年:2017
5.
Current
-voltage characteristics of Au/PLiMMA/n-Si diode under ultraviolet irradiation
作者:
Hayat Ç
;
ulcu
a
;
Muharrem Gö
;
kç
;
en
a
;
;
Abdulkadir Allı
b
;
Sema Allı
b
关键词:
Schottky diode
;
Graft copolymer
;
Electrical properties
;
UV irradiation
;
Surface states density
刊名:Journal of Physics and Chemistry of Solids
出版年:2017
6.
Electropolishing and passivation of silicon nanowires towards hybrid interfaces
作者:
J. Hä
;
nisch
;
C. Klimm
;
J. Rappich
;
rappich@helmholtz-berlin.de
关键词:
Si-nanowire
;
metal assisted etching
;
electropolishing
;
photoluminescence
;
surface defect density
;
dark
-
current
transient
刊名:Electrochimica Acta
出版年:2017
7.
Application of nitrogen-doped TiO
2
nano-tubes in dye-sensitized solar cells
作者:
Vy Anh Tran
a
;
Trieu Thinh Truong
a
;
Thu Anh Pham Phan
a
;
Trang Ngoc Nguyen
a
;
Tuan Van Huynh
b
;
Antonio Agresti
c
;
Sara Pescetelli
c
;
Tien Khoa Le
a
;
Aldo Di Carlo
c
;
Torben Lund
d
;
So-Nhu Le
a
;
Phuong Tuyet Nguyen
a
;
ngtuyetphuong@gmail.com
;
ntphuong@hcmus.edu.vn
关键词:
Dye-sensitized solar cell
;
TiO2 nano-tubes
;
N-doped TiO2
;
TiO2 surface modification
;
Dark
current
刊名:Applied Surface Science
出版年:2017
8.
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
作者:
Sudipta Das
a
;
Krista R. Khiangte
b
;
Rajveer S. Fandan
a
;
Jaswant S. Rathore
b
;
Ravindra S. Pokharia
a
;
Suddhasatta Mahapatra
b
;
Apurba Laha
a
;
laha@ee.iitb.ac.in
关键词:
Epitaxial Ge
;
MBE
;
CMOS
;
Photodetector
刊名:
Current
Applied Physics
出版年:2017
9.
Reverse recovery transient characteristic of PEDOT:PSS/n-Si hybrid organic-inorganic heterojunction
作者:
Ari Bimo Prakoso
a
;
b
;
ari001@e.ntu.edu.sg
;
Lin Ke
c
;
Jianxiong Wang
a
;
Zeyu Li
a
;
b
;
Changyun Jiang
c
;
Rusli
a
;
b
;
erusli@ntu.edu.sg
关键词:
Organic/inorganic hybrid device
;
Heterojunction
;
Reverse recovery transient
;
p-n junction
;
PEDOT
;
PSS
刊名:Organic Electronics
出版年:2017
10.
Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors
作者:
Rechem Djamil
a
;
b
;
rechem_dj@yahoo.fr
;
Khial Aicha
a
;
Abdelkader Souifi
c
;
Djeffal Fayç
;
al
d
关键词:
Tin oxide
;
Thin films
;
Sol-gel method
;
Annealing time
;
UV photodetector
刊名:Thin Solid Films
出版年:2017
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