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在“
Elsevier电子期刊
”中,
命中:
4,349
条,耗时:0.0329833 秒
在所有数据库中总计命中:
5,702
条
1.
Low-temperature photoluminescence properties of Nd-
doped
silicon
oxide thin films containing
silicon
nanocrystals
作者:
E. Steveler
a
;
emilie.steveler@insa-strasbourg.fr
;
H. Rinnert
b
;
M. Vergnat
b
关键词:
Photoluminescence
;
Neodymium
;
Rare earth
;
Silicon
oxide
;
Silicon
nanocrystals
;
Low-temperature
刊名:Journal of Luminescence
出版年:2017
2.
Oxygen precipitation behavior in heavily arsenic
doped
silicon
crystals
作者:
Stephan Haringer
a
;
Daniela Gambaro
b
;
Maria Porrini
a
;
mporrini@sunedisonsemi.it
关键词:
A2. Czochralski method
;
B2. Semiconducting
silicon
;
A1. Characterization
;
A1. Volume defects
刊名:Journal of Crystal Growth
出版年:2017
3.
Ionic liquid assist to prepare Si@N-
doped
carbon nanoparticles and its high performance in lithium ion batteries
作者:
Xiudi Shen
a
;
Wenfeng Jiang
c
;
Huajun Sun
c
;
Yun Wang
c
;
Angang Dong
b
;
agdong@fudan.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Jianhua Hu
a
;
Dong Yang
a
;
yangdong@fudan.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Lithium ion battery
;
N-
doped
carbon
;
Silicon
nanoparticle
;
Core shell structure
;
Ionic liquid
刊名:Journal of Alloys and Compounds
出版年:2017
4.
The research of photocatalytic activity on Si
doped
TiO
2
nanotubes
作者:
Jun Xiao
a
;
18814140791@163.com
;
Zhanchang Pan
a
;
panzhanchang@163.com
;
Bo Zhang
a
;
Gen Liu
a
;
Huangchu Zhang
b
;
Xiaofei Song
b
;
Guanghui Hu
a
;
Chumin Xiao
a
;
Zhigang Wei
a
;
Yuying Zheng
a
关键词:
TiO2 nanotubes
;
Silicon
doping
;
Porous materials
;
Surface
;
Photocatalytic activity
刊名:Materials Letters
出版年:2017
5.
Unipolar resistive switching characteristics of W/Si
3
N
4
/Si memory devices with
doped
silicon
bottom electrodes
作者:
Sungjun Kim
;
Byung-Gook Park
;
bgpark@snu.ac.kr
关键词:
Resistive random-access memory (RRAM)
;
Silicon
nitride (Si3N4)
;
Memory
刊名:Current Applied Physics
出版年:2017
6.
Tunable magnetism in 2D
silicon
carbide
doped
with Co and Fe dopants: Ab initio study
作者:
M. Luo
a
;
mluo@gench.edu.cn
;
Y.H. Shen
b
;
T.L. Yin
b
;
c
关键词:
SiC
;
Magnetic properties
;
First-principles calculation
;
Tunable magnetism
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
7.
The structural and electrical comparison of Y
2
O
3
and Ti-
doped
Y
2
O
3
dielectrics
作者:
Ming Ling Lee
a
;
Chyuan Haur Kao
b
;
d
;
e
;
chkao@mail.cgu.edu.tw
;
Hsiang Chen
c
;
Chan Yu Lin
d
;
Yu Teng Chung
b
;
Kow Ming Chang
a
关键词:
Y2O3
;
Y2Ti2O5
;
Ti-
doped
刊名:Ceramics International
出版年:2017
8.
Behavior of volatile dopants (P, Sb) in Czochralski
silicon
growth
作者:
M. Porrini
;
R. Scala
;
V.V. Voronkov
关键词:
A2. Czochralski method
;
B2. Semiconducting
silicon
;
A1. Doping
;
A2. Industrial Crystallization
刊名:Journal of Crystal Growth
出版年:2017
9.
Electroluminescence from SiN
x
layers
doped
with Ce
3 +
ions
作者:
Tomas Grigaitis
a
;
tomas.grigaitis@ff.vu.lt
;
Arnas Naujokaitis
a
;
b
;
Vytautas Sabonis
a
;
Kęstutis Arlauskas
a
关键词:
Silicon
nitride
;
Plasma deposition
;
Chemical vapor deposition
;
Electroluminescence
;
Sputtering
刊名:Thin Solid Films
出版年:2017
10.
Transparent conductive Hf-
doped
In
2
O
3
thin films by RF sputtering technique at low temperature annealing
作者:
G.H. Wang
a
;
C.Y. Shi
b
;
shichengying@caict.ac.cn
;
L. Zhao
a
;
H.W. Diao
a
;
W.J. Wang
a
关键词:
Transparent conductive oxide films
;
Hf-
doped
In2O3
;
Radio frequency sputtering
;
Hall mobility
;
Low temperature annealing
刊名:Applied Surface Science
出版年:2017
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