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Wiley电子期刊(4)
SpringerLink电子期刊(2)
ACS电子期刊(2)
Springer电子图书(1)
Elsevier电子期刊(14)
在“
Elsevier电子期刊
”中,
命中:
14
条,耗时:小于0.01 秒
在所有数据库中总计命中:
23
条
1.
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
作者:
Talitha Nicoletti
;
Sara Dereste dos Santos
;
Jo茫o Antonio Martino
;
Marc Aoulaiche
;
Anabela Veloso
;
Malgorzata Jurczak
;
Eddy
Simoen
;
Cor Claeys
关键词:
UTBOX
;
FDSOI
;
High temperature
;
Underlap devices
;
Channel length scaling
刊名:Solid-State Electronics
出版年:January, 2014
2.
On the diffusion and activation of n-type dopants in Ge [Mater. Sci. Semicond. Process. 15 (2012) 642-655]
作者:
Jan Vanhellemont
;
Eddy
Simoen
刊名:Materials Science in Semiconductor Processing
出版年:January, 2014
3.
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45掳 rotated substrates
作者:
Rodrigo Trevisoli Doria
;
Jo茫o Antonio Martino
;
Eddy
Simoen
;
Cor Claeys
;
Marcelo Antonio Pavanello
关键词:
Silicon-on-insulator
;
FinFET
;
Low-frequency noise
;
1/f Noise
;
Lorentzian noise
刊名:Solid-State Electronics
出版年:December, 2013
4.
Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
作者:
Luciano Mendes Almeida
;
K谩tia Regina Akemi Sasaki
;
Christian Caillat
;
Marc Aoulaiche
;
Nadine Collaert
;
Malgorzata Jurczak
;
Eddy
Simoen
;
Cor Claeys
;
Jo茫o Antonio Martino
关键词:
UTBOX
;
SOI
;
BJT
;
FBRAM
;
Retention time
;
Current sense margin
刊名:Solid-State Electronics
出版年:December, 2013
5.
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
作者:
Paula Ghedini Der Agopian
;
Caio Cesar Mendes Bordallo
;
Eddy
Simoen
;
Cor Claeys
;
Jo茫o Antonio Martino
关键词:
Gate-Induced-Drain-Leakage
;
MuGFETs
;
Proton irradiation
;
Strained silicon
刊名:Solid-State Electronics
出版年:December, 2013
6.
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique
作者:
Moonju Cho
;
Robin Degraeve
;
Philippe Roussel
;
Bogdan Govoreanu
;
Ben Kaczer
;
Mohammed B. Zahid
;
Eddy
Simoen
;
Antonio Arreghini
;
Malgorzata Jurczak
;
Jan Van Houdt
;
Guido Groeseneken
关键词:
Modeling
;
Charge trapping
;
Non-volatile memory
;
Trap profile
刊名:Solid-State Electronics
出版年:2010
7.
Lagrangian particle dispersion in turbulent flow over a wall mounted obstacle
作者:
D.G.E. Grigoriadis
;
S.C. Kassinos
关键词:
Incompressible flow
;
Large-
eddy
simulation
;
Immersed boundary method
;
Particle dispersion
;
Wake flow
刊名:International Journal of Heat and Fluid Flow
出版年:2009
8.
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
作者:
Paula Ghedini Der Agopian
;
Joã
;
o Antonio Martino
;
Eddy
Simoen
;
Cor Claeys
关键词:
C shape
;
Temperature
;
Gate-induced floating body effect
;
SOI nMOSFETs
刊名:Solid-State Electronics
出版年:2008
9.
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
作者:
Marcelo Antonio Pavanello
;
Joao Antonio Martino
;
Eddy
Simoen
;
Rita Rooyackers
;
Nadine Collaert
;
Cor Claeys
关键词:
FinFET
;
Analog operation
;
Triple-gate
;
Intrinsic gain
;
Early voltage
;
Biaxial strain
刊名:Solid-State Electronics
出版年:2008
10.
Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs
作者:
Marcelo Antonio Pavanello
;
Joã
;
o Antonio Martino
;
Eddy
Simoen
;
Cor Claeys
关键词:
Multiple-gate MOSFETs
;
Threshold voltage
;
Subthreshold slope
;
High temperature
;
FinFETs
刊名:Solid-State Electronics
出版年:2007
1
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