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Wiley电子期刊(2)	NATURE电子期刊(3)	ACS电子期刊(34)
SpringerLink电子期刊(83)	Elsevier电子期刊(470)

在“Elsevier电子期刊”中，命中：470条，耗时：小于0.01 秒

在所有数据库中总计命中：592条

1.Ga-migration on a Ga-rich and As-stabilized surfaces: Ga-droplet and GaAs- nanostructure formation

作者：Jong Su Kim ; ^{jongsukim@ynu.ac.kr" class="auth_mail" title="E-mail the corresponding author}

关键词：Droplet epitaxy ; Ga-migration ; Ga-droplet formation ; GaAs nanostructures

刊名：Materials Science in Semiconductor Processing

出版年：2017

2.Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length

作者：Hanno Kü ; pers^a ; ^{kuepers@pdi-berlin.de} ; Faebian Bastiman^a ; Esperanza Luna^a ; Claudio Somaschini^a ; ^b ; Lutz Geelhaar^a

关键词：A1. Nanostructures ; A1. Crystal morphology ; A3. Molecular beam epitaxy ; B2. Semiconducting gallium arsenide

刊名：Journal of Crystal Growth

出版年：2017

3.Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

作者：Wei Zhang ; Dayun Huo ; Xiaoxiang Guo ; Chen Rong ; Zhenwu Shi ; ^{zwshi@suda.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Changsi Peng ; ^{changsipeng@suda.edu.cn" class="auth_mail" title="E-mail the corresponding author}

关键词：Periodic nanostructures ; GaAs ; Laser interference patterning

刊名：Applied Surface Science

出版年：2016

4.Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE

作者：G. Torelly^a ; ^b ; R. Jakomin^a ; ^c ; L.D. Pinto^a ; ^b ; M.P. Pires^a ; ^d ; J. Ruiz^a ; ^b ; P.G. Caldas^e ; R. Prioli^e ; H. Xie^f ; F.A. Ponce^f ; P.L. Souza^a ; ^b ; ^{plustoza@cetuc.puc-rio.br" class="auth_mail" title="E-mail the corresponding author}

关键词：A.1 Nanostructures ; A.3 Metalorganic vapor phase epitaxy ; B.1 Arsenates ; B.2 Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2016

5.Structural and Raman studies of Ga₂O₃ obtained on GaAs substrate

作者：C. Galvá ; n^a ; ^{galvan.constantini@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; M. Galvá ; n^b ; ^{miguel_galvan_a@yahoo.com.mx" class="auth_mail" title="E-mail the corresponding author} ; J.S. Arias-Ceró ; n^b ; ¹ ; ^{jarias@sees.cinvestav.mx" class="auth_mail" title="E-mail the corresponding author} ; E. Ló ; pez-Luna^a ; ^{edgar.luna@uaslp.mx" class="auth_mail" title="E-mail the corresponding author} ; H. Vilchis^a ; ^{heber.vilchis@uaslp.mx" class="auth_mail" title="E-mail the corresponding author} ; V.M. Sá ; nchez-R^b ; ^{victors@sees.cinvestav.mx" class="auth_mail" title="E-mail the corresponding author}

关键词：Gallium oxide ; Nanostructures ; Raman scattering ; Thermal oxidation

刊名：Materials Science in Semiconductor Processing

出版年：2016

6.Spectral response of the intrinsic region of a GaAs-InAs quantum dot solar cell considering the absorption spectra of ideal cubic dots

作者：Sayantan Biswas^a ; Avigyan Chatterjee^a ; Ashim Kumar Biswas^a ; ^b ; Amitabha Sinha^a ; ^{asinha333@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：Quantum dot solar cell ; Quantum dot absorption coefficient ; Quantum dot size ; Size dispersion

刊名：Physica E: Low-dimensional Systems and Nanostructures

出版年：2016

7.The effects of the intense laser and magnetic fields on the group velocity of light in GaAs/Al_0.3Ga_0.7As near-surface quantum well

作者：D. Bejan^a ; ^{doinitabejan@yahoo.com" class="auth_mail" title="E-mail the corresponding author} ; E.C. Niculescu^b

关键词：Asymmetric quantum wells ; Image charge ; Magnetic field ; Intense laser field ; Nonlinear optic

刊名：Physica E: Low-dimensional Systems and Nanostructures

出版年：2016

8.Tunability of optical gain (SWIR region) in type-II In_0.70Ga_0.30As/GaAs_0.40Sb_0.60 nano-heterostructure under high pressure

作者：H.K. Nirmal^a ; Nisha Yadav^a ; S. Dalela^b ; Amit Rathi^c ; M.J. Siddiqui^d ; P.A. Alvi^a ; ^{drpaalvi@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：InGaAs/GaAsSb ; Optical gain ; Type-II heterostructures ; k.p method ; High pressure

刊名：Physica E: Low-dimensional Systems and Nanostructures

出版年：2016

9.Enhancement in multicolor photoresponse for quaternary capped In_0.5Ga_0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions

作者：S. Upadhyay^a ; A. Mandal^b ; A. Agarwal^b ; H. Ghadi^b ; K.C. Goma Kumari^b ; A. Basu^c ; N.B.V. Subrahmanyam^c ; P. Singh^c ; S. Chakrabarti^b ; ^{subhanandachakrabarti@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：A. Nanostructures ; B. Epitaxial growth ; B. Optical properties ; C. Transmission electron microscopy (TEM) ; D. Electrical properties

刊名：Materials Research Bulletin

出版年：2016

10.ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy

作者：Yuanchang Zhang ; ^{yuanchang.zhang.ctr.cn@us.af.mil" class="auth_mail" title="E-mail the corresponding author} ; Kurt G. Eyink ; Joseph Peoples ; Krishnamurthy Mahalingam ; Madelyn Hill ; Larry Grazulis

关键词：A1. Nanostructures ; A3. Molecular beam epitaxy ; B1. Rare-earth compounds ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2016

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