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SpringerLink电子期刊(1)
Elsevier电子期刊(22)
在“
Elsevier电子期刊
”中,
命中:
22
条,耗时:0.0549727 秒
在所有数据库中总计命中:
23
条
1.
Effects of nitrogen precursor on the Au-assisted vapor-liquid-solid growth of GaAs(N) nanostructures
作者:
Hidetoshi Suzuki
;
Kentaro Sakai
;
Tomohiro Haraguchi
;
Toshihiro Yamauchi
;
Masanobu Hijii
;
Kouji Maeda
;
Tetsuo Ikari
关键词:
A1. Nanostructures
;
A3. Metalorganic chemical vapor deposition
;
A3. Vapor&ndash
;
Liquid&ndash
;
Solid growth
;
B1. Dilute nitride
刊名:Journal of Crystal Growth
出版年:15 January, 2014
2.
Effects of gas-flow sequences on the self-limiting mechanisms of
GaAsN
films grown by atomic layer epita
x
y
作者:
Hidetoshi Suzuki
;
Hajime Sadato
;
Tomohiro Haraguchi
;
Toshihiro Yamauchi
;
Masashi Ozeki
;
Tetsuo Ikari
关键词:
Atomic layer epita
x
y
;
Dilute nitrides
;
GaAsN
X
-
ray
diffraction
;
Self-limiting mechanism
刊名:Thin Solid Films
出版年:2013
3.
1-eV In
GaAsN
/GaAs quantum well structure for high efficiency solar application grown by MOVPE
作者:
T.H. Wu
a
;
Y.K. Su
a
;
yksu@mail.ncku.edu.tw
;
R.W. Chuang
a
;
C.Y. Huang
b
;
H.J. Wu
a
;
Y.C. Lin
c
关键词:
A1.
X
-
ray
diffraction
;
A3. Metalorganic vapor phase epita
x
y
;
B1. Nitrides
;
B3. Semiconducting III&ndash
;
V materials
;
B3. Solar cells
刊名:Journal of Crystal Growth
出版年:2013
4.
Characterization by
X
-
ray
diffraction
and electron microscopy of GaInAs and
GaAsN
single layers and quantum wells grown on GaAs
作者:
Varlet
;
H.
;
Curtil
;
C.
;
Alfonso
;
C.
;
Burle
;
N.
;
Arnoult
;
A.
;
Fontaine
;
C.
;
Laü
;
gt
;
M.
关键词:
61.10.Nz
;
62.20.
&minus
;
x
;
68.37.
&minus
;
d
;
68.55.Nq
;
X
-
ray
diffraction
;
Mechanical properties of solids
;
Microscopy of thin films
;
Composition of thin films
;
Epita
x
ial layers
;
Quantum wells
刊名:Physica E
出版年:2004
5.
Effect of residual hydrogen and temperature on initial growth stages and properties of GaAs
1
x
2212;
x
N
x
作者:
A. Fotkatzikis
;
A. Freundlich
关键词:
A1. High-resolution
X
-
ray
diffraction
;
A1. Reflection high-energy electron
diffraction
;
A3. Chemical beam epita
x
y
;
B1. Nitrides
刊名:Journal of Crystal Growth
出版年:2007
6.
Correlation between Raman intensity of the N-related local vibrational mode and N content in
GaAsN
strained layers grown by MOVPE
关键词:
A1. Compositional analysis
;
A1. High-resolution
X
-
ray
diffraction
;
A3. MOVPE
;
B1.
GaAsN
alloys
;
B1. III
x
2013
;
V-nitrides
;
B2. Semiconducting ternary compounds
刊名:Journal of Crystal Growth
出版年:2007
7.
Post-growth thermal annealing of high N-content
GaAsN
by MOVPE and its effect on strain rela
x
ation
关键词:
A1. High-resolution
X
-
ray
diffraction
;
A1. Optical property
;
A3. Metalorganic vapor phase epita
x
y
;
B2. III
x
2013
;
V-nitrides
;
B3. Laser diodes
刊名:Journal of Crystal Growth
出版年:2007
8.
Study of optical properties of
GaAsN
layers prepared by molecular beam epita
x
y
作者:
A. Pulzara-Mora
;
E. Cruz-Hern
x
e1
;
ndez
;
J. Rojas-Ramirez
;
R. Contreras-Guerrero
;
M. Mel
x
e9
;
ndez-Lira
;
C. Falcony-Guajardo
;
M.A. Aguilar-Frutis
;
M. L
x
f3
;
pez-L
x
f3
;
pez
关键词:
A1. Optical properties
;
A1. Structural characteristics
;
A3. MBE
;
B2. III
x
2013
;
V
x
2013
;
N semiconductors
刊名:Journal of Crystal Growth
出版年:2007
9.
Substrate-surface orientation dependence of N content in MOVPE growth of
GaAsN
films on GaAs
关键词:
A1. Growth model
;
A1. Photoluminescence
;
A1. Substrate misorientation
;
A3. Metalorganic vapor-phase epita
x
y
;
B1.
GaAsN
;
B2. Semiconducting III
x
2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2007
10.
Optical properties and thermal stability of
GaAsN
alloy films
作者:
T.
X
. Li
;
P.P. Chen
;
T. Mori
;
L.H. Bai
;
T. Yao
;
X
.S. Chen
;
W. Lu
关键词:
Molecular beam epita
x
y
;
III
x
2013
;
N
x
2013
;
As alloys
;
Photoluminescence
;
Photo-modulation reflection
;
Rapid thermal annealing
刊名:Journal of Luminescence
出版年:2007
1
2
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