设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
Wiley电子期刊(56)
SpringerLink电子期刊(596)
NATURE电子期刊(58)
Elsevier电子期刊(3558)
Springer电子图书(2)
ProQuest学位论文(4)
GSW全文库(4)
ACS电子期刊(316)
在“
Elsevier电子期刊
”中,
命中:
3,558
条,耗时:0.0399775 秒
在所有数据库中总计命中:
4,594
条
1.
Effects of blocking
oxide
layer types on the performance of nonvolatile floating
gate
memory containing AgInSbTe-SiO
2
nanocomposite thin films
作者:
Kuo-Chang Chiang
;
Tsung-Eong Hsieh
;
tehsieh@mail.nctu.edu.tw
关键词:
Chalcogenides
;
AgInSbTe
;
Blocking
oxide
layer
;
Nonvolatile floating
gate
memory
刊名:Thin Solid Films
出版年:2017
2.
Reliable
gate
stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology
作者:
B. Mohamad
a
;
b
;
blend.mohamad@cea.fr
;
C. Leroux
a
;
D. Rideau
c
;
M. Haond
c
;
G. Reimbold
a
;
G. Ghibaudo
b
关键词:
Effective work function
;
Equivalent
oxide
thickness
;
Channel thickness
;
Buried
oxide
thickness
;
Fully depleted silicon on insulator
刊名:Solid-State Electronics
出版年:2017
3.
Substrate-
gate
coupling in ZnO-FET biosensor for cardiac troponin I detection
作者:
M.F.M. Fathil
a
;
faris.fathil@gmail.com
Author Vitae
;
M.K. Md Arshad
a
;
b
;
mohd.khairuddin@unimap.edu.my
Author Vitae
;
A.R. Ruslinda
a
;
ruslinda@unimap.edu.my
Author Vitae
;
Subash C.B. Gopinath
a
;
c
;
subash@unimap.edu.my
Author Vitae
;
M. Nuzaihan M.N.
a
;
m.nuzaihan@unimap.edu.my
Author Vitae
;
R. Adzhri
a
;
adzhri@gmail.com
Author Vitae
;
U. Hashim
a
;
b
;
uda@unimap.edu.my
Author Vitae
;
H.Y. Lam
d
;
drlamhy@yahoo.ca
关键词:
Biosensor
;
Electrical-based
;
Field-effect transistor
;
Zinc
oxide
nanoparticles
;
Substrate-
gate
coupling
;
Cardiac troponin I
刊名:Sensors and Actuators B: Chemical
出版年:2017
4.
Development and application of the
Oxide
Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating
gate
embedded-flash memory
作者:
Adam Dobri
a
;
b
;
c
;
adam.dobri@st.com
;
Simon Jeannot
a
;
Fausto Piazza
a
;
Carine Jahan
b
;
Jean Coignus
b
;
Luca Perniola
b
;
Francis Balestra
c
关键词:
ONO
;
Leakage current
;
Flash memory
;
Floating
gate
;
40
;
nm embedded flash
刊名:Microelectronics Reliability
出版年:2017
5.
Normally-off AlGaN/AlN/GaN/Si
oxide
-passivated HEMTs and MOS-HEMTs by using CF
4
plasma and ozone water oxidization treatment
作者:
Ching-Sung Lee
a
;
cslee@fcu.edu.tw
;
Han-Yi Liu
a
;
Wei-Chou Hsu
b
;
Si-Fu Chen
a
关键词:
AlGaN/AlN/GaN
;
Normally-off
;
Oxide
passivation
;
MOS-HEMT
;
Al2O3
;
Ozone water oxidization
;
CF4 plasma treatment
刊名:Materials Science in Semiconductor Processing
出版年:2017
6.
Corrosion of refractory alumina plates used in the sliding
gate
system of steelmaking ladle: Chemical experiment
作者:
B.B. De Sousa
a
;
brunabertidesousa@gmail.com
;
W.V. Bielefeldt
b
;
S.R. Braganç
;
a
a
关键词:
Refractory
;
Aluminium
oxide
;
Corrosion slag
;
Plate
;
Sliding
gate
system
;
Secondary metallurgy
;
Static cup corrosion
刊名:Ceramics International
出版年:2017
7.
Low frequency noise assessment in n- and p-channel sub-10 nm triple-
gate
FinFETs: Part II: Measurements and results
作者:
D. Boudier
a
;
dimitri.boudier@ensicaen.fr
;
B. Cretu
b
;
E. Simoen
c
;
R. Carin
a
;
A. Veloso
c
;
N. Collaert
c
;
A. Thean
c
关键词:
Triple-
gate
;
FinFET
;
Low frequency noise
;
1/f noise
;
Generation recombination
;
Traps
刊名:Solid-State Electronics
出版年:2017
8.
Analytical modeling of subthreshold characteristics of ion-implanted symmetric double
gate
junctionless field effect transistors
作者:
Balraj Singh
balraj.bits@gmail.com
;
Deepti Gola
er.deeptigola@gmail.com
;
Kunal Singh
kunals.rs.ece@itbhu.ac.in
;
Ekta Goel
ekta.goel.ece11@iitbhu.ac.in
;
Sanjay Kumar
sanjay.kumar.ece11@iitbhu.ac.in
;
Satyabrata Jit
;
sjit.ece@iitbhu.ac.in
关键词:
Junctionless FET
;
Double-
gate
;
Gaussian-like doping
;
Short channel effects
;
Subthreshold current
;
Subthreshold swing
刊名:Materials Science in Semiconductor Processing
出版年:2017
9.
Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region
作者:
Xiangyu Liu
;
Huiyong Hu
;
18595580989@163.com
;
Bin Wang
;
Meng Wang
;
Genquan Han
;
Shimin Cui
;
Heming Zhang
关键词:
Junctionless Ge n-TFET
;
LDD region
;
GIDL
;
Sloped
gate
oxide
structure
刊名:Superlattices and Microstructures
出版年:2017
10.
Low frequency noise assessment in n- and p-channel sub-10 nm triple-
gate
FinFETs: Part I: Theory and methodology
作者:
D. Boudier
a
;
dimitri.boudier@ensicaen.fr
;
B. Cretu
b
;
E. Simoen
c
;
R. Carin
a
;
A. Veloso
c
;
N. Collaert
c
;
A. Thean
c
关键词:
Triple-
gate
;
FinFET
;
Low frequency noise
;
1/f noise
;
Generation-recombination
;
Traps
刊名:Solid-State Electronics
出版年:2017
1
2
3
4
5
6
7
8
9
按检索点细分(3558)
题名(600)
关键词(344)
文摘(2908)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.