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SpringerLink电子期刊(13)
NATURE电子期刊(4)
Elsevier电子期刊(51)
ACS电子期刊(5)
在“
Elsevier电子期刊
”中,
命中:
51
条,耗时:0.1249377 秒
在所有数据库中总计命中:
73
条
1.
Benchmarks of a
III
-
V
TFET technology platform against the 10-nm
CMOS
FinFET technology node considering basic arithmetic circuits
作者:
S. Strangio
a
;
seb88str@gmail.com
;
P. Palestri
a
;
M. Lanuzza
b
;
D. Esseni
a
;
F. Crupi
b
;
L. Selmi
a
关键词:
III
-
V
;
TFET
;
Full adders
;
Ripple carry adders
刊名:Solid-State Electronics
出版年:2017
2.
N-type doping strategies for InGaAs
作者:
Henry Aldridge Jr
a
;
;
Aaron G. Lind
a
;
Cory C. Bomberger
b
;
Ye
v
geniy Puzyre
v
c
;
Joshua M.O. Zide
b
;
Sokrates T. Pantelides
c
;
Mark E. Law
a
;
Ke
v
in S. Jones
a
关键词:
III
&ndash
;
V
semiconductors
;
Semiconductor processing
;
Thermal processing
;
Dopant acti
v
ation
;
Dopant diffusion
刊名:Materials Science in Semiconductor Processing
出版年:2017
3.
III
-
V
nanocrystal formation in ion-implanted Ge and Si
v
ia liquid phase epitaxy during short-time flash lamp annealing
作者:
Rene Wutzler
;
r.wutzler@hzdr.de" class="auth_mail" title="E-mail the corresponding author
;
Lars Rebohle
;
Slawomir Prucnal
;
René
;
Hü
;
bner
;
Stefan Facsko
;
Roman Bö
;
ttger
;
Manfred Helm
;
Wolfgang Skorupa
关键词:
Ion implantation
;
Flash lamp annealing
;
III
&ndash
;
V
integration
;
Germanium
;
Liquid phase epitaxy
刊名:Materials Science in Semiconductor Processing
出版年:2016
4.
III
-
V
/Ge MOS de
v
ice technologies for low power integrated systems
作者:
S. Takagi
a
;
b
;
takagi@ee.t.u-tokyo.ac.jp" class="auth_mail" title="E-mail the corresponding author
;
M. Noguchi
a
;
M. Kim
a
;
b
;
S.-H. Kim
a
;
b
;
c
;
C.-Y. Chang
a
;
b
;
M. Yokoyama
a
;
b
;
K. Nishi
a
;
b
;
R. Zhang
a
;
d
;
M. Ke
a
;
b
;
M. Takenaka
a
;
b
关键词:
MOSFET
;
Tunneling FET
;
Germanium
;
III
-
V
semiconductors
;
Metal-Oxide-Semiconductor
;
Mobility
;
Interface states
刊名:Solid State Electronics
出版年:2016
5.
Design and analysis of a current mode integrated CTLE with charge mode adaptation
作者:
Di
v
ya Du
vv
uri
a
;
di
v
ya.du
vv
uri@research.
iii
t.ac.in" class="auth_mail" title="E-mail the corresponding author
;
V
ijaya Sankara Rao Pasupureddi
b
;
v
.pasupureddi@cuas.at" class="auth_mail" title="E-mail the corresponding author
关键词:
CTLE
;
Equalization
;
Current mode
;
Charge mode adaptation
刊名:Microelectronics Journal
出版年:2016
6.
High mobility
CMOS
technologies using
III
-
V
/Ge channels on Si platform
作者:
S. Takagi
;
S.-H. Kim
;
M. Yokoyama
;
R. Zhang
;
N. Taoka
;
Y. Urabe
;
T. Yasuda
;
H. Yamada
;
O. Ichikawa
;
N. Fukuhara
;
M. Hata
;
M. Takenaka
关键词:
MOSFET
;
Mobility
;
Strain
;
SiGe
;
Ge
;
III
&ndash
;
V
Semiconductors
刊名:Solid-State Electronics
出版年:2013
7.
Interface engineering and chemistry of Hf-based high-k dielectrics on
III
-
V
substrates
作者:
Gang He
a
;
hegang@ahu.edu.cn
;
Xiaoshuang Chen
b
;
Zhaoqi Sun
a
刊名:Surface Science Reports
出版年:2013
8.
Surface passi
v
ation of
III
–V semiconductors for future
CMOS
de
v
ices—Past research, present status and key issues for future
作者:
H. Hasegawa
;
M. Akazawa
;
A. Domanowska
;
B. Adamowicz
关键词:
III
–
;
V
semiconductor
;
Surface passi
v
ation
;
MISFET
;
High-k dielectric
;
Photoluminescence
;
GaAs
刊名:Applied Surface Science
出版年:2010
9.
First demonstration of de
v
ice-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates
作者:
G. Luco
v
sky
a
;
luco
v
sky@ncsu.edu
;
J.W. Kim
a
;
D. Nordlund
b
关键词:
Ng-HfO2 and TiO2
;
Non-crystalline Hf Si oxynitrides
;
V
acated O-site defects
;
X-ray absorption spectroscopy (XAS)
;
X-ray photoemission spectroscopy (XPS)
;
C&ndash
;
V
and J&ndash
;
V
de
v
ice measurements
刊名:Microelectronic Engineering
出版年:2013
10.
Numerical analysis of the new Implant-Free Quantum-Well
CMOS
: DualLogic approach
作者:
Brahim Benbakhti
a
;
brahim.benbakhti@gmail.com"" rel=""nofollow
;
KahHou Chan
a
;
Ewan Towie
a
;
Karol Kalna
b
;
Craig Riddet
a
;
Xingsheng Wang
a
;
Geert Eneman
c
;
d
;
e
;
Geert Hellings
c
;
d
;
Kristin De Meyer
c
;
d
;
Marc Meuris
c
;
Asen Aseno
v
a
关键词:
III
–
V ;
Germanium
;
CMOS
;
Monte Carlo
刊名:Solid-State Electronics
出版年:2011
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