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在“
Elsevier电子期刊
”中,
命中:
79,792
条,耗时:0.0739918 秒
在所有数据库中总计命中:
115,438
条
1.
Electromagnetic separation of
silico
n carbide
in
clusions with alum
in
um penetration
in
silico
n by imposition of supersonic frequency magnetic field
作者:
Dachuan Jiang
a
;
b
;
Shiqiang Q
in
a
;
b
;
Pengt
in
g Li
a
;
b
;
Shuang Shi
a
;
b
;
Shutao Wen
a
;
b
;
Yi Tan
a
;
b
;
lnsolar@dlut.edu.cn
关键词:
Silico
n carbide
;
Silico
n
;
Electromagnetic
;
Solar energy material
刊名:Journal of Cleaner Production
出版年:2017
2.
Structural and photolum
in
escent properties of a composite tantalum oxide and
silico
n nanocrystals embedded
in
a
silico
n oxide film
作者:
T. Dí
;
az-Becerril
tomas.diaz.be@gmail.com
;
V. Herrera
;
C. Morales
;
G. Garcí
;
a-Salgado
;
E. Rosendo
;
A. Coyopol
;
acoyopol@gmail.com
;
R. Galeazzi
;
R. Romano
;
F.G. Nieto-Caballero
;
J. Sarmiento
关键词:
Composites
;
Tantalum oxide
;
Silico
n nanocrystals
;
Silico
n oxide
刊名:Journal of Lum
in
escence
出版年:2017
3.
Corrosion behavior of
silico
n nitride bonded
silico
n carbide refractory material by molten copper and copper slag
作者:
Andrey Yurkov
;
And-yur@mail.ru
;
ayurkov5@gmail.com
;
Yurkov_al@
in
umit.ru
;
Artem Malakho
;
Victor Avdeev
关键词:
Silico
n Carbide
;
Silico
n Nitride
;
Corrosion
;
Copper
刊名:Ceramics
In
ternational
出版年:2017
4.
Low-temperature photolum
in
escence properties of Nd-doped
silico
n oxide th
in
films conta
inin
g
silico
n nanocrystals
作者:
E. Steveler
a
;
emilie.steveler@
in
sa-strasbourg.fr
;
H. R
in
nert
b
;
M. Vergnat
b
关键词:
Photolum
in
escence
;
Neodymium
;
Rare earth
;
Silico
n oxide
;
Silico
n nanocrystals
;
Low-temperature
刊名:Journal of Lum
in
escence
出版年:2017
5.
Effect of z
in
c oxide addition
in
slag system and heat
in
g manner on boron removal from metallurgical grade
silico
n
作者:
Jijun Wu
a
;
b
;
dragon_wu213@126.com" class="auth_mail" title="E-mail the correspond
in
g author
;
Zhenfei Xia
a
;
Wenhui Ma
a
;
b
;
mwh
silico
n@126.com" class="auth_mail" title="E-mail the correspond
in
g author
;
Fanmao Wang
b
;
Yeqiang Zhou
b
;
Kuixian Wei
a
;
b
关键词:
Metallurgical grade
silico
n
;
Slag reagent
;
Boron removal
;
Removal efficiency
;
Vacuum distillation
刊名:Materials Science
in
Semiconductor Process
in
g
出版年:2017
6.
In
fluence of
silico
n on high-temperature (600 °C) chlorosilane
in
teractions with iron
作者:
Josh Aller
a
;
Josh.aller@yahoo.com
;
Nolan Swa
in
b
;
Michael Baber
a
;
Greg Tatar
b
;
Nathan Jacobson
c
;
Paul Gannon
b
关键词:
SiCl4
;
STC
;
Silico
n Tetrachloride
;
HSiCl3
;
TCS
;
Trichlorosilane
;
H2SiCl2
;
DCS
;
Dichlorosilane
;
MG-Si
;
Metallurgical Grade
Silico
n
;
FEM
;
Field Emission Scann
in
g Electron Microscope
;
EDS
;
Energy Dispersive X-Ray Spectroscopy
;
XRD
;
X-Ray Diffraction
刊名:Solar Energy Materials and Solar Cells
出版年:2017
7.
New process of
silico
n carbide purification
in
tended for
silico
n passivation
作者:
M. Barbouche
a
;
f
;
barbouchemed@gmail.com
;
R. Benabderrahmane Zaghouani
b
;
N.E. Benammar
c
;
V. Aglieri
d
;
M. Mosca
d
;
R. Macaluso
d
;
K. Khirouni
e
;
H. Ezzaouia
f
关键词:
Silico
n carbide
;
Impurities
;
Getter
in
g
;
ICP-AES
;
M
in
ority carrier lifetime
;
Passivation
刊名:Superlattices and Microstructures
出版年:2017
8.
Argon plasma treatment of
silico
n nitride (S
iN
) for improved antireflection coat
in
g on c-Si solar cells
作者:
Hemanta Ghosh
;
Suchismita Mitra
;
Hiranmay Saha
;
Swapan Kumar Datta
;
Chandan Banerjee
;
chandanbanerjee74@gmail.com
关键词:
Argon plasma treatment
;
Silico
n nitride
;
Silico
n oxynitride
;
Double layer anti-reflection coat
in
g
;
PECVD
;
Solar cell
刊名:Materials Science and Eng
in
eer
in
g: B
出版年:2017
9.
Artificial neural network model
in
g for evaluat
in
g the power consumption of
silico
n production
in
submerged arc furnaces
作者:
Zhengjie Chen
a
;
b
;
c
;
Wenhui Ma
a
;
b
;
c
;
mwh
silico
n@126.com
;
Kuixian Wei
a
;
b
;
c
;
Jijun Wu
a
;
b
;
Shaoyuan Li
a
;
c
;
Keqiang Xie
a
;
b
;
Guoqiang Lv
a
;
b
关键词:
Power consumption
;
Submerged arc furnace
;
Silico
n
;
Pearson correlation coefficient
;
Contour diagrams
;
Artificial neural networks
刊名:Applied Thermal Eng
in
eer
in
g
出版年:2017
10.
Removal rate and surface quality of the GLSI
silico
n substrate dur
in
g the CMP process
作者:
Jiao Hong
;
hongjiao072095@163.com
;
X
in
huan Niu
;
xhniu@hebut.edu.cn
;
Yul
in
g Liu
;
Chenwei Wang
;
Baoguo Zhang
;
M
in
g Sun
;
Juan Wang
;
Liy
in
g Han
;
Wenqian Zhang
关键词:
Silico
n substrate CMP
;
Alkal
in
e slurry
;
Silico
n removal rate
;
Surface roughness
;
Haze
刊名:Microelectronic Eng
in
eer
in
g
出版年:2017
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