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Elsevier电子期刊(474)
在“
Elsevier电子期刊
”中,
命中:
474
条,耗时:小于0.01 秒
在所有数据库中总计命中:
474
条
1.
The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells
作者:
Hyojung Bae
a
;
Jun-Beom Park
a
;
Katsushi Fujii
b
;
Hyo-Jong Lee
c
;
Sang-Hyun Lee
d
;
Sang-Wan Ryu
a
;
June Key Lee
a
;
Jun-Seok Ha
a
;
jsha@jnu.ac.kr
关键词:
Hydrogen generation
;
InGaN/GaN
;
Multi quantum well
;
Photoelectrochemistry
;
Water splitting
刊名:Applied Surface Science
出版年:2017
2.
Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication
作者:
Yongjin Wang
a
;
;
Yin Xu
a
;
Yongchao Yang
a
;
Xumin Gao
a
;
Bingcheng Zhu
a
;
Wei Cai
a
;
Jialei Yuan
a
;
Rong Zhang
b
;
Hongbo Zhu
a
关键词:
InGaN/GaN multiple quantum well diode
;
In-plane visible light communication
;
Full-duplex communication
;
GaN-on-silicon platform
;
Waveguide
;
Microfabrication
刊名:Optics Communications
出版年:2017
3.
Quantum confinement effect on the electronic and optical features of InGaN-based solar cells with InGaN/GaN superlattices as the absorption layers
作者:
A. Laref
a
;
b
;
amel_la06@yahoo.fr
;
A. Altujar
a
;
S. Laref
c
;
S.J. Luo
d
关键词:
GaN-InN solar cell based material
;
Photo-voltaic materials
;
Optoelectronic
刊名:Solar Energy
出版年:2017
4.
Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD
作者:
K. Prabakaran
a
;
R. Ramesh
a
;
M. Jayasakthi
a
;
S. Surender
a
;
S. Pradeep
a
;
M. Balaji
c
;
K. Asokan
d
;
K. Baskar
a
;
b
;
drbaskar2009@gmail.com
;
karanphy07@gmail.com
关键词:
InGaN
;
Quantum well
;
Electronic excitation
;
Intermixing effects
;
Photoluminescence
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2017
5.
Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells
作者:
Makoto Miyoshi
a
;
b
;
miyoshi.makoto@nitech.ac.jp
;
Tatsuya Tsutsumi
a
;
Tomoki Kabata
a
;
Takuma Mori
a
;
Takashi Egawa
a
;
b
关键词:
MQW
;
multiple quantum well
;
EQE
;
external quantum efficiency
;
ECE
;
energy conversion efficiency
;
PL
;
photoluminescence
;
NRC
;
nonradiation recombination center
刊名:Solid-State Electronics
出版年:2017
6.
Fabrication of Ag nanoparticle/ZnO thin films using dual-plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) system incorporated with photoreduction method and its application
作者:
Po-Hsun Lei
;
Chun-Han Cheng
关键词:
Ag NP/zinc oxide
;
Dual-plasma-enhanced metal-organic chemical vapor deposition
;
Photoreduction
;
InGaN/GaN light-emitting diodes (LED)
刊名:Materials Science in Semiconductor Processing
出版年:2017
7.
Intersubband optical absorption between multi energy levels of electrons in InGaN/GaN spherical core-shell quantum dots
作者:
W.H. Liu
;
Y. Qu
;
quyuan@imu.edu.cn
;
S.L. Ban
关键词:
Intersubband optical absorption
;
Refractive index change
;
CSQD
;
Built in electric field
;
Ternary mixed crystal effect
;
Size effect
刊名:Superlattices and Microstructures
出版年:2017
8.
Evidence of the formation of small nanostructures in the growth of InGaN/GaN multi-quantum wells
作者:
Dipankar Biswas
;
diiibiswas@yahoo.co.in
;
Apu Mistry
apumistry@gmail.com
;
Partha Pratim Bera
pratimpartha.bera@gmail.com
关键词:
Quantum Well
;
Annealing
;
Interdiffusion
;
Photoluminescence
;
Nanostructures
;
Red-blue shift
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
9.
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
作者:
J. Mickevičius
;
juras.mickevicius@ff.vu.lt
;
D. Dobrovolskas
;
R. Aleksiejūnas
;
K. Nomeika
;
T. Grinys
;
A. Kadys
;
G. Tamulaitis
关键词:
A1. Carrier localization
;
A3. MOCVD
;
A3. Quantum wells
;
A3. SPSL
;
B1. Nitrides
刊名:Journal of Crystal Growth
出版年:2017
10.
The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition
刊名:Journal of Luminescence
出版年:2017
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