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内部出版物
Wiley电子期刊(5)
NATURE电子期刊(5)
ACS电子期刊(23)
SpringerLink电子期刊(138)
Elsevier电子期刊(609)
在“
Elsevier电子期刊
”中,
命中:
609
条,耗时:小于0.01 秒
在所有数据库中总计命中:
780
条
1.
Elimination of the channel current effect on the characterization of MOSFET threshold voltage using
junction
capacitance
measurements
作者:
Daniel Tomaszewski
a
;
dtomasz@ite.waw.pl
;
Grzegorz Głuszko
a
;
ggluszko@ite.waw.pl
;
Lidia Łukasiak
b
;
l.lukasiak@imio.pw.edu.pl
;
Krzysztof Kucharski
a
;
kucharsk@ite.waw.pl
;
Jolanta Malesińska
a
;
jmales@ite.waw.pl
关键词:
MOSFET
;
CMOS
;
Threshold voltage
;
Junction
capacitance
;
Parameter extraction
刊名:Solid-State Electronics
出版年:2017
2.
On the studies of
capacitance
-voltage-temperature and deep level characteristics of an Au/p-GaTe Schottky diode
作者:
Murat Gü
;
lnahar
a
;
mgulnahar@erzincan.edu.tr
;
Hasan Efeoğlu
c
;
Mustafa Şahin
b
关键词:
Schottky diodes
;
GaTe
;
Layered crystal
;
Series resistance
;
Deep levels
;
Capacitance
measurements
;
TSC measurements
刊名:Journal of Alloys and Compounds
出版年:2017
3.
Fabrication, temperature dependent current-voltage characteristics and photoresponse properties of Au/α-PbO
2
/p-Si/Al hetero
junction
photodiode
作者:
M.M. Makhlouf
a
;
b
;
m_makhlof@hotmail.com
;
m.makhlouf@tu.edu.sa
;
M.M. EL-Nahass
c
;
M.H. Zeyada
d
关键词:
PbO2
;
Photodiode
;
Electric mechanisms
;
Photoresponse properties
刊名:Materials Science in Semiconductor Processing
出版年:2017
4.
Two-dimensional dopant profiling of gallium nitride p-n
junction
s by scanning
capacitance
microscopy
作者:
M. Lamhamdi
a
;
b
;
;
F. Cayrel
a
;
E. Frayssinet
d
;
A.E. Bazin
c
;
A. Yvon
c
;
E. Collard
c
;
Y. Cordier
d
;
D. Alquier
a
关键词:
Gallium nitride
;
Ion implantation
;
Scanning
capacitance
microscopy
;
Atomic Force Microscopy
;
Dopant profiling
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2016
5.
Charge and spin current oscillations in a tunnel
junction
induced by magnetic field pulses
作者:
C.A. Dartora
a
;
cadartora@eletrica.ufpr.br" class="auth_mail" title="E-mail the corresponding author
;
K.Z. Nobrega
b
;
bzuza1@yahoo.com.br" class="auth_mail" title="E-mail the corresponding author
;
G.G. Cabrera
c
;
cabrera@ifi.unicamp.br" class="auth_mail" title="E-mail the corresponding author
关键词:
Magnetic tunnel
junction
;
Spin current
;
Tunneling
;
Spin
capacitance
刊名:Physica B: Physics of Condensed Matter
出版年:2016
6.
Elaboration of a finite element model of pancreatic islet dielectric response to gap
junction
expression and insulin release
作者:
Khalil Leon Heileman
a
;
Jamal Daoud
a
;
Maryam Tabrizian
a
;
b
;
maryam.tabrizian@mcgill.ca" class="auth_mail" title="E-mail the corresponding author
关键词:
Islets of Langerhans
;
Dielectric spectroscopy
;
Dielectric cell models
;
Cell aggregates
;
Membrane
capacitance
;
Gap
junction
s
刊名:Colloids and Surfaces B: Biointerfaces
出版年:2016
7.
Effect of wavelength on the electrical parameters of a vertical parallel
junction
silicon solar cell illuminated by its rear side in frequency domain
作者:
Gö
;
khan Sahin
;
g.sahin38@hotmail.fr
关键词:
Vertical parallel
junction
;
Wavelength
;
Frequency modulation
;
Electrical parameters
刊名:Results in Physics
出版年:2016
8.
Preparation and characterization of semiconductor GNR-CNT nanocomposite and its application in FET
作者:
Sedighe Salimian
a
;
std_salimian@khu.ac.ir" class="auth_mail" title="E-mail the corresponding author
;
Mohammad Esmaeil Azim Araghi
a
;
Ahmad Nozad Golikand
b
关键词:
Graphene nanoribbon
;
Nanocomposite
;
Rectifying effect
;
p&ndash
;
n
junction
;
Quantum
capacitance
刊名:Journal of Physics and Chemistry of Solids
出版年:2016
9.
A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature
作者:
Dharmendra Singh Yadav
tech.dharmendra26@gmail.com
;
Bhagwan Ram Raad
;
bhagwanramraad@gmail.com
;
Dheeraj Sharma
dheeraj24482@gmail.com
关键词:
Ambipolar conduction
;
Charge plasma
;
Sub-threshold swing
;
Gate to drain
capacitance
;
Work function engineering
刊名:Superlattices and Microstructures
出版年:2016
10.
Humidity-dependent characteristics of DNA thin film-based Al/DNA/Al surface-type cell
作者:
Hassan Maktuff Jaber Al-Ta&rsquo
;
ii
a
;
b
;
hassankirkukly@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
domez973@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Vengadesh Periasamy
a
;
vengadeshp@um.edu.my" class="auth_mail" title="E-mail the corresponding author
;
Yusoff Mohd. Amin
c
关键词:
Humidity sensor
;
Alpha particle
;
DNA
;
Sensitivity
;
Response time
;
Capacitance
刊名:Sensors & Actuators: B. Chemical
出版年:2016
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