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Elsevier电子期刊(12)
在“
Elsevier电子期刊
”中,
命中:
12
条,耗时:0.022989 秒
在所有数据库中总计命中:
12
条
1.
Life cycle assessment of Jatropha biodiesel as transportation fuel in rural India
作者:
Wouter M.J. Achten
;
Joana Almeida
;
Vincent
Fobelets
;
Evelien Bolle
;
Eri
k
Mathijs
;
Virendra P. Singh
;
Dina N. Tewari
;
Louis V. Verchot
;
Bart Muys
关键词:
Biogas
;
Energy balance
;
Greenhouse gas balance
;
Impact assessment
;
Jatropha curcas
;
Land use
刊名:Applied Energy
出版年:2010
2.
1/f
作者:
K
ristel
Fobelets
;
Sergey L. Rumyantsev
;
Thomas Hac
k
barth
;
Michael S. Shur
关键词:
Electrical noise
;
Strained-Si
;
MODFET
刊名:Solid-State Electronics
出版年:2009
3.
Unipolar rectifying silicon nanowires—TCAD study
作者:
K
.
Fobelets
;
J.E. Velazquez-Perez
关键词:
Nanowires
;
TCAD
;
Rectification
刊名:Physica E
出版年:2008
4.
A novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling
作者:
K
.
Fobelets
;
P.W. Ding
;
J.E. Velazquez-Perez
关键词:
Field effect transistor
;
SOI
;
TCAD
刊名:Solid-State Electronics
出版年:2007
5.
SiGe HMOSFET monolithic inverting current mirror
作者:
Michela
k
is
;
K
.
;
Despotopoulos
;
S.
;
Papavassiliou
;
C.
;
Vilches
;
A.
;
Fobelets
;
K
.
;
Toumazou
;
C.
关键词:
Analogue electronics
;
MOSFETs
;
Semiconductor epitaxial layers
;
Si-Ge alloys
刊名:Solid State Electronics
出版年:2005
6.
Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET
作者:
Gaspari
;
V.
;
Fobelets
;
K
.
;
Velazquez-Perez
;
J.E.
;
Ferguson
;
R.
;
Michela
k
is
;
K
.
;
Despotopoulos
;
S.
;
et. al.
关键词:
71.20.Nr
;
73.40
;
73.40.Qv
;
85.30.Tv
;
85.40.-e
;
07.20.M
;
Semiconductor compounds
;
Heterostructures&mdash
;
electrical properties
;
Metal&ndash
;
insulator&ndash
;
semiconductor structures (including semiconductor-to-insulator)
;
Field-effect devices
;
Microelectron
刊名:Applied Surface Science
出版年:2004
7.
SiGe virtual substrate HMOS transistor for analogue applications
作者:
Michela
k
is
;
K
.
;
Despotopoulos
;
S.
;
Gaspari
;
V.
;
Vilches
;
A.
;
Fobelets
;
K
.
;
Papavassiliou
;
C.
;
et. al.
关键词:
Si&ndash
;
Ge alloys
;
Band structure
;
Semiconductor epitaxial layers
;
MOSFETs
;
Analogue electronics
刊名:Applied Surface Science
出版年:2004
8.
Buried-channel SiGe HMODFET device potential for micropower applications
作者:
Vilches
;
A.
;
Michela
k
is
;
K
ostis
;
Fobelets
;
K
ristel
;
Haigh
;
David
;
Papavassiliou
;
Christos
;
et. al.
关键词:
SiGe
;
HFET
;
Micropower
;
Low-voltage
;
Parameter extraction
刊名:Solid-State Electronics
出版年:2004
9.
Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs
作者:
Olsen
;
S.H.
;
O
;
Neill
;
A.G.
;
Norris
;
D.J.
;
Cullis
;
A.G.
;
Fobelets
;
K
.
;
K
emhadjian
;
H.A.
关键词:
Strained Si/SiGe
;
MOSFETs
;
Transconductance
;
Cross-hatching
;
Oxide interface roughness
;
AFM
;
TEM
刊名:Solid-State Electronics
出版年:2003
10.
Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
作者:
Fobelets
;
K
.
;
Jeamsa
k
siri
;
W.
;
Papavasilliou
;
C.
;
Vilches
;
T.
;
Gaspari
;
V.
;
Velazquez-Perez
;
J.E.
;
et. al.
刊名:Solid-State Electronics
出版年:2004
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